Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride--tetrafluoroethylene) and Pentacene Thin Films

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概要

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• Organic ferroelectric field-effect transistor (FET) memories have been fabricated using pentacene as the semiconductor and a flat poly(vinylidene fluoride--tetrafluoroethylene) [P(VDF--TeFE)] thin film as the ferroelectric gate. The P(VDF--TeFE) film is prepared by spin coating, and it was cooled slowly with a flattening process after annealing. The polarization--electric field (P--E) hysteresis of the P(VDF--TeFE) thin film prepared by slow cooling is larger than that in the case of quick cooling. Moreover, the flattening process does not have a negative effect on ferroelectric properties. The obtained remanent polarization (P_{\text{r}}) of 5.2 μC/cm2 is sufficient for controlling the pentacene surface potential. Good memory characteristics are obtained in the P(VDF--TeFE) gate FET with pentacene deposited on the flat P(VDF--TeFE). The maximum drain current is about twice larger than that deposited on the rough P(VDF--TeFE) prepared by quick cooling, and the memory retention is over 1 week.

• 2012-02-25

著者

• Kanashima Takeshi

  Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

• Okuyama Masanori

  Institute for NanoScience Design, Osaka University, Toyonaka, Osaka 560-8531, Japan

• Yabe Kazuki

  Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan

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