Contactless Characterization of Fixed Charge in HfO_2 Thin Film by Photoreflectance
スポンサーリンク
概要
- 論文の詳細を見る
- 2004-09-15
著者
-
SOHGAWA Masayuki
Graduate School of Engineering Science, Osaka University
-
KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
-
Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
-
Fujimoto A
Wakayama National Coll. Technol. Wakayama Jpn
-
KANASHIMA Takeshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
-
OKUYAMA Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
-
Okuyama Masanori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
-
Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
-
Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
-
Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
-
Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
-
Yoshida Masato
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
-
SOHGAWA Masayuki
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
-
NAOYAMA Takuji
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
-
TADA Taizou
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
-
IKEDA Koji
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
-
Tada Taizou
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
-
Naoyama Takuji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
-
Fujimoto A
Department Of Electrical Engineering Wakayama National College Of Technology
-
Okuyama M
Graduate School Of Engineering Science Osaka University
-
Sougawa Masayuki
Graduate School Of Engineering Science Osaka University
-
Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
-
Tada Taizou
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
-
Yoshida Masato
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
-
Ikeda Koji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
-
Naoyama Takuji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
-
Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
-
Kanashima Takeshi
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
関連論文
- Stability Improvement of Tactile Sensor of Normal and Shear Stresses Using Ni-Cr Thin Film Gauge
- Oxygen Annealing Effect of Photoelectron Spectra in SrBi_2Ta_2O_9 Film
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Preparation of Pb(Zr_TiO_)O_3 Thin Films at Low-Temperature of Loss than 4000℃ by Hydrothermal Treatment Following Sol-Gel Deposition
- Low-temperature Crystallization of Metal Organic Decomposition BaTiO_3 Thin Film by Hydrothermal Annealing
- Ferroelectric Gate FET Memory based on Conduction of SBT-Silicon Oxide Interface
- Complete Atrioventricular Block Secondary to Lithium Therapy
- Preparation of m=1-2 Series Natural-Superlattice-Structured Bismuth-Layer-Structured Ferroelectric Thin Films
- Natural-Superlattice-Structured Ferroelectric Bi_4Ti_3O_ SrBi_4Ti_4O_ Thin Films Prepared by Pulsed Laser Deposition
- A Significant Improvement in Memory retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
- Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition
- Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
- Liquid Phase Epitaxial Growth of lnGaAsP on GaAs_P_y Substrates (y=0.3l and 0.39)
- LPE Growth of Lattice-Matched InGaAsP on GaAs_P_ Substrates and Low Threshold Current Density Operation of Visible InGaAsP DH Lasers
- CW Lasing Characteristics of Visible InGaAsP Lasers Grown on GaAsP Substrates
- Analyses of High Frequency Capacitance-Voltage Characteristics of Metal-Ferroelectrics-Insulator-Silicon Structure
- Contactless Characterization of Fixed Charges in HfO_2 Thin Film from Photoreflectance
- Contactless Characterization of Fixed Charge in HfO_2 Thin Film by Photoreflectance
- Giant Ferroelectric Polarization Beyond 150μC/cm^2 in BiFeO_3 Thin Film
- Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition
- Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Molecular Orbital Analysis of Response of SnO2 Gas Sensor for Aminic Gases (Proceedings of The 5Th East Asian Conference on Chemical Sensors: The 33RD Chemical Sensor Symposium)
- Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO_2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Characterization of F_2 Treatment Effects on Si(100) Surface and Si(100)/SiO_3 Interface
- Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
- Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
- Investigation of Fatigue Mechanisms in Pb(Zr, Ti)O_3 Films from a Correlated Analysis of Hysteresis Parameters in a Lattice Model with Distributed Polarization Clamping
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment
- Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
- Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory
- Low-Temperature Preparation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7Thin Films by Pulsed Laser Deposition and Their Application to Metal-Ferroelectric-Insulator-Semiconductor-FET
- Low-Temperature Preparation of Sr_2(Ta_ Nb_x)_2O_7 Thin Films by Pulsed Laser Deposition and its Electrical Properties
- An improvement in C-V Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- A Study on a Metal-Ferroelectric-Oxide-Semiconductor Structure with Thin Silicon Oxide Film Using SrBi_2Ta_2O_9 Ferroelectric Films Prepared by Pulsed Laser Deposition
- An Improvement in Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_Bi_Ta_2O_9 Ferroelectric Films Prepared on SiO_2/Si at Low Temperature by Pulsed Laser Deposition
- Optical Absorption and Electron Spin Resonance Studies of Nonlinear Optical Crystal Li_3VO_4 Grown by the Floating-Zone Method
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Characterization of Surface Potential of Si-SiO_2 Interface by Photoreflectance Spectroscopy
- Contactless Measurement of Surface Temperature and Surface Potential of Si by Photoreflectance Spectroscopy
- Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
- Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
- Ferroelectric Properties of Bi1.1Fe1-xCoxO3 Thin Films Prepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing in N2 and O2
- Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
- Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
- Preparation of BiFe0.9Co0.1O3 Films by Pulsed Laser Deposition under Magnetic Field
- Preparation of BiFeO3 Thin Films on SrRuO3/SrTiO3(001) Substrate by Dual Ion Beam Sputtering
- Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
- Supersonic Jet Spectroscopic Study of 1-Methy1-2(1H)-pyridinimine and Its Deuterated Analog
- A Deposition Mechanism of SiO_2 Chemical Vapor Deposition Using Tetra-Isocyanate Silane and Water
- Theoretical Calculations for the Elimination of Silanol and Decrease in Dielectric Constant
- Low-Temperature Preparation of Ferroelectric Sr_2(Ta_, Nbx)_2O_7 Thin Films by Pulsed Laser Deposition and Their Application to MFIS Structure
- Low-Temperature Preparation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Films by Pulsed Laser Deposition and Their Application to Metal-Ferroelectric- Insulator-Semiconductor-FET
- Pulsed Laser Deposition and Characterization of Sr and Zn Co-Substituted BiFeO3 Thin Films
- A Significant Improvement in Memory Retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
- Ferroelectric and Piezoelectric Properties of Polycrystalline BiFeO3 Thin Films Prepared by Pulsed Laser Deposition under Magnetic Field
- Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors
- Fabrication of a Flexible Array for Tactile Sensors with Microcantilevers and the Measurement of the Distribution of Normal and Shear Forces
- Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements
- Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride--tetrafluoroethylene) and Pentacene Thin Films
- Fabrication and Characterization of Ferroelectric Poly(vinylidene fluoride–tetrafluoroethylene) Gate Field-Effect Transistor Memories
- Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
- Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
- Contactless Characterization of Fixed Charges in HfO2 Thin Film from Photoreflectance
- A Low Temperature Preparation of BaTiO3 Thin Film by Sol-Gel-Hydrothermal Treatment below 210°C
- Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Natural-Superlattice-Structured Ferroelectric Bi4Ti3O12–SrBi4Ti4O15 Thin Films Prepared by Pulsed Laser Deposition
- Preparation of $m=1--2$ Series Natural-Superlattice-Structured Bismuth-Layer-Structured Ferroelectric Thin Films
- Microwave Tunable Devices Composed of Coplanar Waveguide Line with (Ba0.6,Sr0.4)TiO3/Au/Cr/(Ba0.6,Sr0.4)TiO3 Sandwich Structure
- Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature
- Low-Temperature Preparation and Characterization of (Pb,Ba)TiO3 Thin Film by Sol–Gel and Hydrothermal Treatment
- Fabrication and Noise Reduction of the Miniature Tactile Sensor Using Through-Silicon-Via Connection with Signal Amplifier
- Characterization of Surface Potential and Strain at Ultrathin Oxide/Silicon Interface by Photoreflectance Spectroscopy
- Analysis of Si–H, Si–O–H and Si–O–O–H Defects in SiO 2 Thin Film by Molecular Orbital Method
- Characterization of Charged Traps near Si–SiO2 Interface in Photo-Induced Chemical Vapor Deposited SiO2 Film
- Preparation and Characterization of High-$k$ Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition
- Proton transfer in the excited state of 1- and 2-methyl-4-amino-5H-(1)benzopyrano(3,4-c)pyridin-5-one dimers and complexes.
- Crosstalk Reduction of Tactile Sensor Array with Projected Cylindrical Elastomer over Sensing Element