Kanashima Takeshi | Department Of Electrical Engineering Faculty Of Engineering Science Osaka University

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概要

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著作論文

Stability Improvement of Tactile Sensor of Normal and Shear Stresses Using Ni-Cr Thin Film Gauge
Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature
Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition
Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
Contactless Characterization of Fixed Charges in HfO_2 Thin Film from Photoreflectance
Contactless Characterization of Fixed Charge in HfO_2 Thin Film by Photoreflectance
Giant Ferroelectric Polarization Beyond 150μC/cm^2 in BiFeO_3 Thin Film
Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition
Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
Molecular Orbital Analysis of Response of SnO2 Gas Sensor for Aminic Gases (Proceedings of The 5Th East Asian Conference on Chemical Sensors: The 33RD Chemical Sensor Symposium)
Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO_2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
Characterization of F_2 Treatment Effects on Si(100) Surface and Si(100)/SiO_3 Interface
Analysis of Si-H, Si-O-H and Si-O-O-H Defects in SiO_2 Thin Film by Molecular Orbital Method
Theoretical Analysis of Hydrogen-Related Defects in SiO_2 Thin Film by Molecular Orbital Method
Improvement in the Property of Field Effect Transistor Having the HfO2/Ge Structure Fabricated by Photoassisted Metal Organic Chemical Vapor Deposition with Fluorine Treatment
Characterization of Charged Traps near Si-SiO_2 Interface in Photo-Induced Chemical Vapor Deposited SiO_2 Film
Characterization of Charged Traps near Si-SiO_2 Interface in Photo-CVD SiO_2 Film
Ferroelectric Properties of Bi1.1Fe1-xCoxO3 Thin Films Prepared by Chemical Solution Deposition Using Iterative Rapid Thermal Annealing in N2 and O2
Theoretical Analysis of Oxygen-Excess Defects in SiO_2 Thin Film by Molecular Orbital Method
Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
Preparation of BiFeO3 Thin Films on SrRuO3/SrTiO3(001) Substrate by Dual Ion Beam Sputtering
Theoretical Analysis of Oxygen-Excess Defects in SiO2 Thin Film by Molecular Orbital Method
Passivation of Ge(100) and (111) Surfaces by Termination of Nonmetal Elements
Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride--tetrafluoroethylene) and Pentacene Thin Films
Fabrication and Characterization of Ferroelectric Poly(vinylidene fluoride–tetrafluoroethylene) Gate Field-Effect Transistor Memories
Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
Analysis of Si–H, Si–O–H and Si–O–O–H Defects in SiO 2 Thin Film by Molecular Orbital Method
Characterization of Charged Traps near Si–SiO2 Interface in Photo-Induced Chemical Vapor Deposited SiO2 Film

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