MAIDA Osamu | Department of Physical Science, Graduate School of Engineering Science, Osaka University
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概要
- 同名の論文著者
- Department of Physical Science, Graduate School of Engineering Science, Osaka Universityの論文著者
関連著者
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OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
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KANASHIMA Takeshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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MAIDA Osamu
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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Maida Osamu
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okada N
Nec Corp. Kanagawa Jpn
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Okada N
Honda Electronics Co. Ltd. Toyohashi Jpn
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Okada Norio
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Okada Nagaya
Research Institute Of Electronics Shizuoka University:(present Address) Honda Electronics Co.
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WADA HIDEO
Department of Pediatrics, School of Medicine, Faculty of Medicine, Kanazawa University
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UENO Masato
Department of Neurosurgery, Osaka Neurological Institute
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Ueno Masato
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Eriguchi K
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Eriguchi Koji
Ulsi Process Technology Development Center Matsushita Electronics
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Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
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Fujimoto A
Wakayama National Coll. Technol. Wakayama Jpn
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Ohashi Haruhiko
Japan Synchrotron Radiation Research Institute Experimental Facilities Division
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Wada Hideo
Department Of Molecular And Laboratory Medicine Mie University Graduate School Of Medicine
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Wada Hideo
Japan Defense Agency
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Wada Hideo
Technical Research And Development Institute Japan Defense Agency
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KOHMA Norinao
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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SHIBUYA Akira
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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OHASHI Haruhiko
Experimental Facilities Division, Japan Synchrotron Radiation Research Institute
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Wada H
Japan Defense Agency
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Kohma Norinao
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Agata Masashi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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FUJIMOTO Akira
Dept. Electrical Engineering, Wakayama National College of Technology
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AGATA Masashi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Fujimoto A
Department Of Electrical Engineering Wakayama National College Of Technology
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Okuyama M
Graduate School Of Engineering Science Osaka University
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Agata Masashi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Wada Hideo
Department Of Internal Medicine Mie University School Of Medicine
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Eriguchi Koji
ULSI Process Tech. Dev. Ctr., Matsushita Electronics
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Wada Hideo
Department of Electronic Chemistry, Tokyo Institute of Technology at Nagatsuta
著作論文
- Evaporation and Expansion of Poly-tetra-fluoro-ethylene Induced by Irradiation of Soft X-Rays from a Figure-8 Undulator
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Evaluation of Interface SiO_x Transition Layer in Ultrathin SiO_2 Film by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode
- Evaluation of Interface SiO_x Transition Layer by Oscillatory Tunneling Current-Voltage Characteristics in Photo-CVD SiO_2-Si Diode