Okuyama M | Graduate School Of Engineering Science Osaka University
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概要
関連著者
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Okuyama M
Graduate School Of Engineering Science Osaka University
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野田 三喜男
愛知教大
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Noda M
Department Of Electronics Fukuoka Institute Of Technology
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Narita Masanao
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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OKUYAMA Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama Masanori
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
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Noda Minoru
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Fujimoto Akira
Department Of Electrical Engineering Wakayama National College Of Technology
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Fujimoto A
Wakayama National Coll. Technol. Wakayama Jpn
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Sugiyama H
Data Storage Amp Retrieval Systems Division Hitachi Ltd.
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Fujimoto A
Department Of Electrical Engineering Wakayama National College Of Technology
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SUGIYAMA Hideki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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SOHGAWA Masayuki
Graduate School of Engineering Science, Osaka University
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YAMASHITA Kaoru
Graduate School of Science and Technology, Kyoto Institute of technology
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Takahashi Mitsue
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Yamashita Kaoru
Graduate School Of Science And Technology Kyoto Institute Of Technology
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Yamashita Kaoru
Graduate School Of Engineering Science Osaka University
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Takahashi M
Institute Of Industrial Science The University Of Tokyo
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NAKAISO Toshiyuki
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Sougawa Masayuki
Graduate School Of Engineering Science Osaka University
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Nakaiso Toshiyuki
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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OKUYAMA Masanori
Graduate School of Engineering Science, Osaka University
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OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
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Eriguchi K
Matsushita Electric Industrial Co. Ltd. Osaka Jpn
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Eriguchi Koji
Ulsi Process Technology Development Center Matsushita Electronics
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KANASHIMA Takeshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Okuyama Masanori
Graduate School Of Engineering Science Osaka University
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama M
Osaka Univ. Osaka Jpn
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KODAMA Kazushi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Kodama Kazushi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Agata Masashi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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FUJIMOTO Akira
Dept. Electrical Engineering, Wakayama National College of Technology
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Ricinschi D
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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Maida Osamu
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Eriguchi Koji
ULSI Process Tech. Dev. Ctr., Matsushita Electronics
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奥山 雅則
大阪大学基礎工学研究科
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HUANG Yu
Graduate School of Engineering Science, Osaka University
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NODA Minoru
Graduate School of Science and Technology, Kyoto Institute of technology
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NOMA Haruo
ATR Knowledge Science Labs.
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Huang Yu
Graduate School Of Engineering Science Osaka University
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Wei Zhiqiang
Graduate School Of Engineering Science Osaka University
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Noda Minoru
Graduate School Of Engineering Science Osaka University
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Wada Hideo
Japan Defense Agency
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Wada Hideo
Technical Research And Development Institute Japan Defense Agency
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KANASHIMA Takeshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Yamashita K
Graduate School Of Engineering Science Osaka University
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Adachi Yuji
Matusita Electric Industrial Co.ltd.
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Wada H
Japan Defense Agency
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OKUYAMA Masanori
Division of Advanced Electronics and Optical Science, Department of System Innovation, Graduate Scho
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Lerescu Alexandru
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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ADACHI Yuji
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Adachi Yuji
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama Masanori
Division Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate Schoo
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Okuyama Masanori
Division of Advanced Electrics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Kanashima Takeshi
Division of Advanced Electrics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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WADA HIDEO
Department of Pediatrics, School of Medicine, Faculty of Medicine, Kanazawa University
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ONISHI Hiroyuki
Graduate School of Engineering Science, Osaka University
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TACHIBANA Hiroto
Graduate School of Engineering Science, Osaka University
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Noda Minoru
Division Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate Schoo
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Onishi Hiroyuki
Graduate School Of Engineering Science Osaka University
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Wada Hideo
Department Of Molecular And Laboratory Medicine Mie University Graduate School Of Medicine
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OKUYAMA Masanori
Osaka Prefecture SEIS Project
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MAIDA Osamu
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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AGATA Masashi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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MAIDA Osamu
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Tachibana Hiroto
Graduate School Of Engineering Science Osaka University
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Sohgawa Masayuki
Graduate School Of Engineering Science Osaka University
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Yoshida Masato
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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XU Huaping
Graduate School of Engineering Science, Osaka University
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KITAI Satoshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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RICINSCHI Dan
Department of Electricity and Magnetism, Faculty of Physics, Al. I. Cuza University
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Xu Huaping
Graduate School Of Engineering Science Osaka University
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Maida Osamu
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Maida Osamu
The Institute Of Scientific And Industrial Research Osaka University
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HUANG Yu
Department of Engineering Science, Osaka University
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SOHGAWA Masayuki
Department of Engineering Science, Osaka University
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Grishin Alex
Condensed Matter Physics Royal Institute Of Technology
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Kitai Satoshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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SOHGAWA Masayuki
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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NAOYAMA Takuji
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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TADA Taizou
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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IKEDA Koji
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School
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YUN Kwi
Division of Advanced Electronics and Optical Science, Department of System Innovation, Graduate Scho
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RICINSCHI Dan
Division of Advanced Electronics and Optical Science, Department of System Innovation, Graduate Scho
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SOUGAWA Masayuki
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka
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AGATA Masashi
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka
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YAMASHITA Kaoru
Division of Advanced Electronics and Optical Science, Graduate School of Engineering Science, Osaka
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AGATA Masashi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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WADA Hideo
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Yun Kwi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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Tada Taizou
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Naoyama Takuji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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LERESCU Alexandru
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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RICINSCHI Dan
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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HEDBLOM Patrik
Condensed Matter Physics, Royal Institute of Technology
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Ricinschi Dan
Department Of Electricity And Electronics Iasi Faculty Of Physics " Al. I. Cuza" Universit
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Hedblom Patrik
Condensed Matter Physics Royal Institute Of Technology
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Yoshizaki Tomoya
Osaka University
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Noda Minoru
Kyoto Institute of Technology
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Agata Masashi
Department Of Physical Science Graduate School Of Engineering Science Osaka University
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Wada Hideo
Department Of Internal Medicine Mie University School Of Medicine
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Tada Taizou
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Onishi Hiroyuki
Graduate School Of Agriculture Kinki University
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Yoshida Masato
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Ikeda Koji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Naoyama Takuji
Area Of Advanced Electronics And Optical Science Department Of Systems Innovation Graduate School Of
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Yamashita Kaoru
Kyoto Institute Of Technology
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Ming Huang
Department of Engineering Science, Osaka University
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Wada Hideo
Department of Electronic Chemistry, Tokyo Institute of Technology at Nagatsuta
著作論文
- Stability Improvement of Tactile Sensor of Normal and Shear Stresses Using Ni-Cr Thin Film Gauge
- Oxygen Annealing Effect of Photoelectron Spectra in SrBi_2Ta_2O_9 Film
- Preparation of Pb(Zr_TiO_)O_3 Thin Films at Low-Temperature of Loss than 4000℃ by Hydrothermal Treatment Following Sol-Gel Deposition
- Low-temperature Crystallization of Metal Organic Decomposition BaTiO_3 Thin Film by Hydrothermal Annealing
- Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
- Contactless Characterization of Fixed Charge in HfO_2 Thin Film by Photoreflectance
- Giant Ferroelectric Polarization Beyond 150μC/cm^2 in BiFeO_3 Thin Film
- Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition
- Molecular Orbital Analysis of Response of SnO2 Gas Sensor for Aminic Gases (Proceedings of The 5Th East Asian Conference on Chemical Sensors: The 33RD Chemical Sensor Symposium)
- Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
- Investigation of Fatigue Mechanisms in Pb(Zr, Ti)O_3 Films from a Correlated Analysis of Hysteresis Parameters in a Lattice Model with Distributed Polarization Clamping
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment
- Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory
- Low-Temperature Preparation of Sr_2(Ta_ Nb_x)_2O_7 Thin Films by Pulsed Laser Deposition and its Electrical Properties
- An improvement in C-V Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- A Study on a Metal-Ferroelectric-Oxide-Semiconductor Structure with Thin Silicon Oxide Film Using SrBi_2Ta_2O_9 Ferroelectric Films Prepared by Pulsed Laser Deposition
- An Improvement in Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors