Noda Minoru | Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

スポンサーリンク

概要

関連著者

もっと見る

著作論文

Oxygen Annealing Effect of Photoelectron Spectra in SrBi_2Ta_2O_9 Film
Preparation of m=1-2 Series Natural-Superlattice-Structured Bismuth-Layer-Structured Ferroelectric Thin Films
Natural-Superlattice-Structured Ferroelectric Bi_4Ti_3O_ SrBi_4Ti_4O_ Thin Films Prepared by Pulsed Laser Deposition
A Significant Improvement in Memory retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment
Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment
Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory
Low-Temperature Preparation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7Thin Films by Pulsed Laser Deposition and Their Application to Metal-Ferroelectric-Insulator-Semiconductor-FET
Low-Temperature Preparation of Sr_2(Ta_ Nb_x)_2O_7 Thin Films by Pulsed Laser Deposition and its Electrical Properties
An improvement in C-V Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
A Study on a Metal-Ferroelectric-Oxide-Semiconductor Structure with Thin Silicon Oxide Film Using SrBi_2Ta_2O_9 Ferroelectric Films Prepared by Pulsed Laser Deposition
An Improvement in Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_Bi_Ta_2O_9 Ferroelectric Films Prepared on SiO_2/Si at Low Temperature by Pulsed Laser Deposition
Low-Temperature Preparation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Films by Pulsed Laser Deposition and Their Application to Metal-Ferroelectric- Insulator-Semiconductor-FET
A Significant Improvement in Memory Retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
A Low Temperature Preparation of BaTiO3 Thin Film by Sol-Gel-Hydrothermal Treatment below 210°C
Natural-Superlattice-Structured Ferroelectric Bi4Ti3O12–SrBi4Ti4O15 Thin Films Prepared by Pulsed Laser Deposition
Preparation of $m=1--2$ Series Natural-Superlattice-Structured Bismuth-Layer-Structured Ferroelectric Thin Films
Low-Temperature Preparation and Characterization of (Pb,Ba)TiO3 Thin Film by Sol–Gel and Hydrothermal Treatment

もっと見る

スポンサーリンク