Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment

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概要

• 論文の詳細を見る
• 2001-09-25

著者

• 野田 三喜男

  愛知教大

• Noda Minoru

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Takahashi Mitsue

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• OKUYAMA Masanori

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• Okuyama Masanori

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Noda M

  Department Of Electronics Fukuoka Institute Of Technology

• Narita Masanao

  Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency

• KODAMA Kazushi

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• Kodama Kazushi

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Takahashi M

  Institute Of Industrial Science The University Of Tokyo

• Okuyama M

  Graduate School Of Engineering Science Osaka University

• Okuyama Masanori

  Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

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