Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature
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概要
- 論文の詳細を見る
Irradiation effects of soft X-rays on Si wafer in O2 and N2 atmospheres have been studied at SPring-8, the synchrotron radiation (SR) facility in Japan. Si wafers were irradiated in O2 and N2 ambients of $3 \times 10^{-3}$, 0.2 and 12 Pa. The Si surfaces were analyzed by Auger electron spectroscopy to study the changes on the Si surface. In the case where O2 or N2 gas pressure is the order of 10-3 Pa, etching of the native oxide is observed. On the other hand, a Si (92 eV) $L_{23}VV$ peak shift was observed at a pressure of 12 Pa at low temperatures below 150°C@. Nitrization and oxidation of the Si surface can be promoted by direct reaction of silicon with nitrogen and oxygen gases at low temperature by soft X-ray irradiation.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 2001-06-15
著者
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Ueno Masato
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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OHASHI Haruhiko
Japan Synchrotron Radiation Research Institute
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Maida Osamu
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Kohma Norinao
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Yudate Shinji
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Agata Masashi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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Okuyama Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Okuyama Masanori
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Maida Osamu
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Kanashima Takeshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Kanashima Takeshi
Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan
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Agata Masashi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Kohma Norinao
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Ueno Masato
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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Yudate Shinji
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering Science, Osaka University, Toyonaka, Osaka 560-8531, Japan
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