Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature
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概要
- 論文の詳細を見る
- 2001-06-01
著者
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Ueno Masato
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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OHASHI Haruhiko
Japan Synchrotron Radiation Research Institute
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Ohashi Haruhiko
Japan Synchrotron Radiation Research Institute Experimental Facilities Division
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KANASHIMA Takeshi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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MAIDA Osamu
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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KOHMA Norinao
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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AGATA Masashi
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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YUDATE Shinji
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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OKUYAMA Masanori
Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Kohma Norinao
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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