Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment

スポンサーリンク

概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 2002-04-30

著者

• 野田 三喜男

  愛知教大

• Noda Minoru

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Takahashi Mitsue

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• OKUYAMA Masanori

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• Okuyama Masanori

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Noda M

  Department Of Electronics Fukuoka Institute Of Technology

• Narita Masanao

  Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency

• KODAMA Kazushi

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• Kodama Kazushi

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• Lerescu Alexandru

  Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S

• RICINSCHI Dan

  Area of Materials and Device Physics, Department of Physical Science, Graduate School of Engineering

• Takahashi M

  Institute Of Industrial Science The University Of Tokyo

• Ricinschi D

  Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School

• Okuyama M

  Graduate School Of Engineering Science Osaka University

• Okuyama Masanori

  Area of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University, 1-3 Machikaneyama-cho, Toyonaka, Osaka 560-8531, Japan

関連論文

• Stability Improvement of Tactile Sensor of Normal and Shear Stresses Using Ni-Cr Thin Film Gauge
• Oxygen Annealing Effect of Photoelectron Spectra in SrBi_2Ta_2O_9 Film
• Electrical Conduction Mechanism in Bi_4Ti_3O_ Single Crystal
• Flight Performance of the AKARI Cryogenic System
• The Infrared Astronomical Mission AKARI
• IRTS Observation of the Unidentified 3.3-Micron Band in the Diffuse Galactic Emission
• IRTS Observation of the Near-Infrared Spectrum of the Zodiacal Light
• The IRTS(Infrared Telescope in Space)Mission
• Low-Noise Infrared Detection System with InSb Photodiode for Infrared Astronomy : Techniques, Instrumentations and Measurement
• The Far-Infrared Surveyor (FIS) for AKARI
• Preparation and Characterization of Fluorocarbon Thin Films Deposited by Soft X-Ray Ablation of Polytetrafluoroethylene
• Thermal Enzyme Sensor Utilizing Temperature-Sensitive Magnetic Thin Film
• Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature
• Preparation of Pb(Zr_TiO_)O_3 Thin Films at Low-Temperature of Loss than 4000℃ by Hydrothermal Treatment Following Sol-Gel Deposition
• Low-temperature Crystallization of Metal Organic Decomposition BaTiO_3 Thin Film by Hydrothermal Annealing
• パルス放電プラズマ化学気相成長によるAl基板上へのダイヤモンドの形成
• Formation of Diamond Films by Intermittent DC Plasma Chemical Vapor Deposition Using Subelectrode
• 補助電極を用いたパルス放電プラズマCVDによるダイヤモンド膜の作製
• 補助電極を用いたパルス放電プラズマCVDによるダイヤモンド膜の作製
• 補助電極を用いたパルス放電プラズマCVDによるダイヤモンド膜の作製
• ダイヤモンド膜のパルス放電プラズマCVDによる作製と膜質の制御
• パルス放電プラズマ化学気相成長(CVD)によるダイヤモンド膜の作製
• Effects of V-Doipng on Mixed Conduction Properties of Bismuth Titanate Single : Crystals
• Preparation of m=1-2 Series Natural-Superlattice-Structured Bismuth-Layer-Structured Ferroelectric Thin Films
• Natural-Superlattice-Structured Ferroelectric Bi_4Ti_3O_ SrBi_4Ti_4O_ Thin Films Prepared by Pulsed Laser Deposition
• Wide-Area Mapping of 155 Micron Continuum Emission from the Orion Molecular Cloud Complex
• A Significant Improvement in Memory retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
• Preparation and Characterization of High-k Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition
• Simulation of Switching Properties of Ferroelectrics on the Basis of Dipole Lattice Model
• Grain Size Dependence of Switching Properties of Ferroelectric BaTiO_3 Ceramics
• Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
• Analyses of High Frequency Capacitance-Voltage Characteristics of Metal-Ferroelectrics-Insulator-Silicon Structure
• Contactless Characterization of Fixed Charges in HfO_2 Thin Film from Photoreflectance
• Contactless Characterization of Fixed Charge in HfO_2 Thin Film by Photoreflectance
• Giant Ferroelectric Polarization Beyond 150μC/cm^2 in BiFeO_3 Thin Film
• Preparation and Characterization of High-k Lanthanoid Oxide Thin Films Deposited by Pulsed Laser Deposition
• Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
• Molecular Orbital Analysis of Response of SnO2 Gas Sensor for Aminic Gases (Proceedings of The 5Th East Asian Conference on Chemical Sensors: The 33RD Chemical Sensor Symposium)
• Non-Destructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
• Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
• Optical Characterization of Gate Oxide Charging Damage by Photoreflectance Spectroscopy
• Investigation of Fatigue Mechanisms in Pb(Zr, Ti)O_3 Films from a Correlated Analysis of Hysteresis Parameters in a Lattice Model with Distributed Polarization Clamping
• Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment
• Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment
• Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
• Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory
• Low-Temperature Preparation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7Thin Films by Pulsed Laser Deposition and Their Application to Metal-Ferroelectric-Insulator-Semiconductor-FET
• Low-Temperature Preparation of Sr_2(Ta_ Nb_x)_2O_7 Thin Films by Pulsed Laser Deposition and its Electrical Properties
• An improvement in C-V Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
• A Study on a Metal-Ferroelectric-Oxide-Semiconductor Structure with Thin Silicon Oxide Film Using SrBi_2Ta_2O_9 Ferroelectric Films Prepared by Pulsed Laser Deposition
• An Improvement in Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
• First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides
• A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_Bi_Ta_2O_9 Ferroelectric Films Prepared on SiO_2/Si at Low Temperature by Pulsed Laser Deposition
• First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides
• Formation of Diamond Films by Intermittent Discharge Plasma Chemical Vapor Deposition ( Plasma Processing)
• Hydrogen-Etching Effect of Substrate on Deposition of Diamond Films by DC Plasma Chemical Vapor Deposition
• Effect of Discharge Current on the Microstructure of Diamond Films Deposited on Aluminum Substrate at Low Substrate Temperature by DC Plasma CVD
• Deposition of Diamond onto an Aluminum Substrate by DC Plasma CVD
• Anomalous Magnetic Behavior due to Reversible Fluxoid Motion in Superconducting Multifilamentary Wires with Very Fine Filaments
• Coupling-Current Loss in a Multifilamentary Superconducting Wire Subjected to a Transverse AC Magnetic Field with a Relatively High Sweep Rate
• Abnormal Transverse-Field Effects in Nonideal Type 2 Superconductors. : III. A Theory for an AC-Induced Decrease in the Semi-Quasistatic Magnetization Parallel to a DC Bias Field
• Trapped-Energy Vibratory Gyroscopes Using a Piezoelectric Ceramic Plate with Plano-Mesa Structure
• Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors
• Low-Temperature Preparation of Ferroelectric Sr_2(Ta_, Nbx)_2O_7 Thin Films by Pulsed Laser Deposition and Their Application to MFIS Structure
• Low-Temperature Preparation of Ferroelectric Sr2(Ta1-x,Nbx)2O7 Thin Films by Pulsed Laser Deposition and Their Application to Metal-Ferroelectric- Insulator-Semiconductor-FET
• A Significant Improvement in Memory Retention of Metal-Ferroelectric-Insulator-Semiconductor Structure for One Transistor-Type Ferroelectric Memory by Rapid Thermal Annealing
• Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors
• Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
• Contactless Characterization of Fixed Charges in HfO2 Thin Film from Photoreflectance
• A Low Temperature Preparation of BaTiO3 Thin Film by Sol-Gel-Hydrothermal Treatment below 210°C
• Nondestructive and Contactless Monitoring Technique of Si Surface Stress by Photoreflectance
• Natural-Superlattice-Structured Ferroelectric Bi4Ti3O12–SrBi4Ti4O15 Thin Films Prepared by Pulsed Laser Deposition
• Preparation of $m=1--2$ Series Natural-Superlattice-Structured Bismuth-Layer-Structured Ferroelectric Thin Films
• Synchrotron Radiation-Induced Nitrization and Oxidation on Si Surface at Low Temperature
• Low-Temperature Preparation and Characterization of (Pb,Ba)TiO3 Thin Film by Sol–Gel and Hydrothermal Treatment
• Preparation and Characterization of High-$k$ Praseodymium and Lanthanoid Oxide Thin Films Prepared by Pulsed Laser Deposition

もっと見る 閉じる

スポンサーリンク