Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors
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概要
- 論文の詳細を見る
Piezoelectric ultrasonic microsensors have been fabricated on buckling-controlled silicon dioxide diaphragms for sensitivity enhancement. A precise stress control process has been developed for fragile SiO2 diaphragms, which are derived from a surface oxidized normal silicon wafer, to allow spontaneous buckling and to make re-buckle upward. The fabricated sensors on upward- and downward-buckled SiO2 diaphragms have been evaluated in terms of static deflection and sensitivity. The upward-buckled diaphragms show the deflection around +4.8μm while the downward ones show that around -3.5μm. Totally a four times higher sensitivity is obtained on average of forty sensors in the comparison of the upward diaphragm sensors to the downward ones.
- 電気学会の論文
- 2011-07-01
著者
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野田 三喜男
愛知教大
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OKUYAMA Masanori
Osaka Prefecture SEIS Project
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Noda M
Department Of Electronics Fukuoka Institute Of Technology
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Yamashita Kaoru
Graduate School Of Science And Technology Kyoto Institute Of Technology
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Narita Masanao
Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency
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Okuyama M
Graduate School Of Engineering Science Osaka University
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Yoshizaki Tomoya
Osaka University
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Noda Minoru
Kyoto Institute of Technology
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Yamashita Kaoru
Kyoto Institute Of Technology
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