パルス放電プラズマ化学気相成長によるAl基板上へのダイヤモンドの形成
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関連論文
- Stability Improvement of Tactile Sensor of Normal and Shear Stresses Using Ni-Cr Thin Film Gauge
- Oxygen Annealing Effect of Photoelectron Spectra in SrBi_2Ta_2O_9 Film
- Flight Performance of the AKARI Cryogenic System
- The Infrared Astronomical Mission AKARI
- IRTS Observation of the Unidentified 3.3-Micron Band in the Diffuse Galactic Emission
- IRTS Observation of the Near-Infrared Spectrum of the Zodiacal Light
- The IRTS(Infrared Telescope in Space)Mission
- Low-Noise Infrared Detection System with InSb Photodiode for Infrared Astronomy : Techniques, Instrumentations and Measurement
- 自己バイアスを消去したRFプラズマの特性
- The Far-Infrared Surveyor (FIS) for AKARI
- パルス放電プラズマ化学気相成長によるAl基板上へのダイヤモンドの形成
- Formation of Diamond Films by Intermittent DC Plasma Chemical Vapor Deposition Using Subelectrode
- 補助電極を用いたパルス放電プラズマCVDによるダイヤモンド膜の作製
- 補助電極を用いたパルス放電プラズマCVDによるダイヤモンド膜の作製
- 補助電極を用いたパルス放電プラズマCVDによるダイヤモンド膜の作製
- ダイヤモンド膜のパルス放電プラズマCVDによる作製と膜質の制御
- パルス放電プラズマ化学気相成長(CVD)によるダイヤモンド膜の作製
- Wide-Area Mapping of 155 Micron Continuum Emission from the Orion Molecular Cloud Complex
- Fabrication and Normal/Shear Stress Responses of Tactile Sensors of Polymer/Si Cantilevers Embedded in PDMS and Urethane Gel Elastomers
- Giant Ferroelectric Polarization Beyond 150μC/cm^2 in BiFeO_3 Thin Film
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen-Annealing Treatment
- 高周波スパッタリングにより作成したa-C:H膜の微細構造
- 高周波スパッタリングにより作成したa-Si:Hの薄膜の微細構造と電気的・光学的特性
- 高周波マグネットロンスパッタリングにより作成したa-Si:H薄膜の微細構造と電気的・光学的特性
- 参加創造型授業についての論考
- Improved Retention Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure Using a Post-Oxygen Annealing Treatment
- Analysis and Improvement of Retention Time of Memorized State of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory
- Studies on Improving Retention Time of Memorized State of MFIS Structure for Ferroelectric Gate FET Memory
- Low-Temperature Preparation of Ferroelectric Sr_2(Ta_,Nb_x)_2O_7Thin Films by Pulsed Laser Deposition and Their Application to Metal-Ferroelectric-Insulator-Semiconductor-FET
- Low-Temperature Preparation of Sr_2(Ta_ Nb_x)_2O_7 Thin Films by Pulsed Laser Deposition and its Electrical Properties
- An improvement in C-V Characteristics of Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- A Study on a Metal-Ferroelectric-Oxide-Semiconductor Structure with Thin Silicon Oxide Film Using SrBi_2Ta_2O_9 Ferroelectric Films Prepared by Pulsed Laser Deposition
- An Improvement in Metal-Ferroelectric-Insulator-Semiconductor Structure for Ferroelectric Gate FET Memory Using a Silicon Nitride Buffer Layer
- First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides
- A Fatigue-Tolerant Metal-Ferroelectric-Oxide-Semiconductor Structure with Large Memory Window Using Sr-deficient and Bi-excess Sr_Bi_Ta_2O_9 Ferroelectric Films Prepared on SiO_2/Si at Low Temperature by Pulsed Laser Deposition
- First Demonstration of Rectifying Property of P-I-N Heterojunctions Fabricated by Tri-Layered Semiconducting Oxides
- Formation of Diamond Films by Intermittent Discharge Plasma Chemical Vapor Deposition ( Plasma Processing)
- Hydrogen-Etching Effect of Substrate on Deposition of Diamond Films by DC Plasma Chemical Vapor Deposition
- Effect of Discharge Current on the Microstructure of Diamond Films Deposited on Aluminum Substrate at Low Substrate Temperature by DC Plasma CVD
- Deposition of Diamond onto an Aluminum Substrate by DC Plasma CVD
- Anomalous Magnetic Behavior due to Reversible Fluxoid Motion in Superconducting Multifilamentary Wires with Very Fine Filaments
- Coupling-Current Loss in a Multifilamentary Superconducting Wire Subjected to a Transverse AC Magnetic Field with a Relatively High Sweep Rate
- Abnormal Transverse-Field Effects in Nonideal Type 2 Superconductors. : III. A Theory for an AC-Induced Decrease in the Semi-Quasistatic Magnetization Parallel to a DC Bias Field
- Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors
- RFスパッタにおける基板表面温度較正
- Buckling Control of Silicon Dioxide Diaphragms for Sensitivity Enhancement of Piezoelectric Ultrasonic Microsensors