補助電極を用いたパルス放電プラズマCVDによるダイヤモンド膜の作製

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概要

• 論文の詳細を見る

• 陰極の近くに補助電極を設置し陰極と陽極(基板)間の放電を安定化させたパルス放電ブラズマCVDにより, 各周期の放電時間(Td)と放電停止時間(Tn)を変化させてダイヤモンド膜を作製した. 陰極と基板間の放電電流は, パルス電源の出力と基板のバイアス電圧により制御した. シリコン基板上に成長させた膜の結晶性は, Tdが減少しTnが増加するとき, 良くなった. 成膜速度は, Tdが0.5 msより減少し, Tnが2msより増加するとき遅くなった. 成膜速度を低下させることなく, 結晶性の良い膜が得られる最適なTdおよびTnは, 0.5および2msであった. プラズマ中の水素の発光強度は成膜速度が低下するとき減少し, 強度から計算した励起温度は, 結晶性がよくなるとき増加した.

• 社団法人電子情報通信学会の論文
• 1999-05-21

著者

• 野田 三喜男

  愛知教大

• Noda M

  Department Of Electronics Fukuoka Institute Of Technology

• 野田 三喜男

  愛知教育大学総合理学

• Narita Masanao

  Institute Of Space And Astronautical Science Japan Aerospace Exploration Agency

• 野田 三喜男

  愛知教育大学

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