Photoluminescence and Its Excimer Laser Irradiation Effects in SiO_2 Film Prepared by Photo-Induced Chemical Vapor Deposition
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概要
- 論文の詳細を見る
Defects and other imperfections in photo-induced chemical vapor deposition (photo-CVD) SiO_2 films have been characterized by photoluminescence excited by ArF and F_2 excimer lasers. Photoluminescence peaks have been observed at around 2.7, 3.5 and 4.4 eV and are characteristic of both the deposition temperatures of photo-CVD and excitation energy. The intensity of the photoluminescence peak at around 2.7 eV initially increases with ArF excimer laser irradiation but decreases after about 2000 shots. On the other hand, it decreases monotonously with F_2 excimer laser irradiation. The origins of these peaks have been discussed in terms of various dependences of photoluminescence and absorption spectra.
- 社団法人応用物理学会の論文
- 1993-06-30
著者
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KANASHIMA Takeshi
Graduate School of Engineering Science, Osaka University
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Hamakawa Yoshihiro
Faculty Of Science And Engineering Ritsumeikan University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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OKUYAMA Masanori
Department of Electrical Engineering, Facully of Engineering Science, Osaka University
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KANASHIMA Takeshi
Department of Physical Science, Graduate School of Engineering Science, Osaka University
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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Okuyama Masanori
Faculty Of Engineering Science Osaka University
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Kanashima Takeshi
Graduate School Of Engineering Science Osaka University
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Kanashima Takeshi
Division Of Advanced Electronics And Optical Science Department Of System Innovation Graduate School
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Okuyama M
Osaka Univ. Osaka Jpn
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Hamakawa Y
Faculty Of Science And Engineering Ritsumeikan University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Kanashima Takeshi
Area Of Materials And Device Physics Department Of Physical Science Graduate School Of Engineering S
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