Characterization of Charged Traps near Si–SiO2 Interface in Photo-Induced Chemical Vapor Deposited SiO2 Film
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概要
- 論文の詳細を見る
Charged traps near the Si–SiO2 interface in a SiO2 film deposited by photo-induced chemical vapor deposition (photo-CVD) have been analyzed by the photo I–V method. In the as-deposited film, positively charged traps distribute in the region between 2 nm and 10 nm from the Si–SiO2 interface, and their density decreases monotonically with increasing depth. The density of traps in the region between 2 nm and 4 nm is decreased by annealing in N2 or O2, and that of traps in the region between 4 nm and 10 nm is decreased only by annealing in O2. Furthermore, the results of electron spin resonance (ESR) analysis suggest the possibility that the positively charged traps in the 2–4 nm region are related to the defects observed in ESR.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Okuyama Masanori
Department Of Electrical Engineering Faculty Of Engineering Schience Osaka University
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IWASAKI Shinya
Department of Applied Biochemistry, Utsunomiya University
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Yamamoto Hideaki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Kanashima Takeshi
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Department Of Electrical Engineering Faculty Of Engineering Osaka University
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Okumura Katsuhide
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Hamakawa Yoshihiro
Department of Electrical Engineering, Faculty of Engineering Science,
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Yamamoto Hideaki
Department of Electrical Engineering, Faculty of Engineering Science,
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Iwasaki Shinya
Department of Electrical Engineering, Faculty of Engineering Science,
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Okumura Katsuhide
Department of Electrical Engineering, Faculty of Engineering Science,
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