High-Sensitivity SOI MOS Photodetector with Self-Amplification
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概要
- 論文の詳細を見る
A high-sensitivity silicon-on-insulator (SOI) metal-oxide-silicon (MOS) photodetector compatible with conventional silicon technology is proposed. Its operation principle is based on that of a lateral bipolar transistor in spite of an SOI MOS device structure. Photodetectors with narrow base width or short channel length have high current gain which is attributed to a self-biased effect under illumination. Current gain as high as 100 has been achieved for the device with a channel length of 1.0 µm. Measured intrinsic response time for optical pulses is 19 µs for the photodetector with a channel length of 0.7 µm.
- INSTITUTE OF PURE AND APPLIED PHYSICSの論文
- 1996-02-28
著者
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Yamamoto Hideaki
Department Of Electrical Engineering Faculty Of Engineering Science Osaka University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Taniguchi Kenji
Department of Electronic Engineering, Osaka University, 2–1 Yamada-oka, Suita-shi, Osaka 565, Japan
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Yamamoto Hideaki
Department of Electronic Engineering, Osaka University, 2–1 Yamada-oka, Suita-shi, Osaka 565, Japan
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