Normal Electric Field Dependence of Electron Mobility in MOS Inversion Layer
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概要
- 論文の詳細を見る
Short channel MOSFETs with a channel length of 0.38 μm were experimentally investigated and analyzed using a two-dimensional device simulation. FET characteristics can be explained well when the effect of the normal field on the electron mobility (Cooper-Nelson formulas) in the inversion layers is taken into account. The normal field dependence of the electron mobility is interpreted in terms of a two-dimensional quantization of the electrons.
- 社団法人応用物理学会の論文
- 1986-07-20
著者
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Hamaguchi Chihiro
Deparimsnt Of Elecironics Facully Of Engineering Osaka University
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Shirahata Masayoshi
Department Of Electronics Faculty Of Engineering Osaka University
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