Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)

スポンサーリンク

概要

• 論文の詳細を見る

• Energy band structures of short period superlattices (GaAs),./(AIAs), with mranged from l to 11 are calculated by using the tight-binding approximation, wherethe second-nearest neighbor interactions are included in addition to the nearestneighbor interactions. The calculated lowest direct and indirect energy gaps are foundto depend on the valence band discontinuity. Momentum matrix elements are alsocalculated for the transitions between the top valence bands and several lowest con-duction bands in order to clarify the optical transition, allowed or forbidden. It isfound that the transition for the lowest direct gap in the superlattices with m< 5 is for-bidden, reflecting the band folding eflect. The present calculations show a good agree-ment with the previous experimental observation, where (GaAs)./(AIAs), superlat-tices are indirect gap material for m<7 and direct gap material for m>7.[super1attice, GaAs/AIAs, direct and indirect transition, tight-binding method, ]l energy band structure, allowed transition, forbidden transitionl

• 社団法人日本物理学会の論文
• 1989-10-15

著者

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• Hamaguchi Chihiro

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Hamaguchi Chihiro

  Deparimsnt Of Elecironics Facully Of Engineering Osaka University

• Fujimoto Hiroki

  Department Of Chemistry Faculty Of Science Kyoto University

• FUJIMOTO Hidetoshi

  Department of Electronic Engineering,Faculty of Engineering,Osaka University

• NAKAZAWA Takeshi

  Department of Electronic Engineering,Faculty of Engineering,Osaka University

• IMANISHI Kenji

  Department of Electronic Engineering,Faculty of Engineering,Osaka University

• Fujimoto Hidetoshi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Imanishi Kenji

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Nakazawa T

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Nakazawa Takeshi

  Department Of Electronic Engineering Faculty Of Engineering Osaka University

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

• Fujimoto Hidetoshi

  Department of Chemistry, Faculty of Science, Kyoto University

関連論文

• Effective Cancer Targeting Using an Anti-tumor Tissue Vascular Endotheliumm specific Monoclonal Antibody (TES-23)
• Atomic configuration of boron pile-up at the Si/SiO2 interface
• Influences of Point and Extended Defects on As Diffusion in Si(Structure and Mechanical and Thermal Properties of Condensed Matter)
• Process Variation Compensation Technique for 0.5-V Body-Input Comparator
• Process Variation Compensation Technique for Voltage-controlled Ring Oscillator
• Analytical Expression Based Design of a Low-Voltage FD-SOI CMOS Low-Noise Amplifier(Analog Circuit Techniques and Related Topics)
• Ultralow-Power Current Reference Circuit with Low Temperature Dependence(Building Block, Analog Circuit and Device Technologies)
• Watch-Dog Circuit for Quality Guarantee with Subthreshold MOSFET Current(New System Paradigms for Integrated Electronics)
• Watchdog Circuit for Product Degradation Monitor using Subthreshold MOS Current
• A New Analog Correlator Circuit for DS-CDMA Wireless Applications
• Error Analysis on Simultaneous Data Transfers in CDMA Wired Interface
• C-12-26 An Auto-sensitivity Control Circuit for DS-CDMA Receiver Circuit
• Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
• Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
• Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
• Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling
• Display Wall Empowered Visual Mining for CEOP Data Archive(Coordinated Enhanced Observing Period(CEOP))
• Initial CEOP-based Review of the Prediction Skill of Operational General Circulation Models and Land Surface Models(Coordinated Enhanced Observing Period(CEOP))
• Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon
• Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
• Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate
• Impact Excitation of Carriers in Diamond under Extremely High Electric Fields
• Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
• Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
• Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
• Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
• Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
• Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
• Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
• Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
• Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
• Role of Boron Atoms on Fluorine Diffusion under Various Stages of Annealing
• Boron Emission Rate from Si/SiO_2 Interface Traps to Bulk Silicon for Dose Loss Modeling
• Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
• Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
• A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
• Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
• Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
• Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs : Effects of Substrate Impurity(the IEEE International Coference on SISPAD '02)
• New Nondestructive Carrier Profiling for Ion Implanted Si Using Infrared Spectroscopic Ellipsometry
• Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
• Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
• Two-Dimensional Simulation of Quantum Tunneling across Barrier with Surface Roughness
• Nonlinear Dynamics of Periodic Electric-Field Domains in Quantum Well Infrared Photodetectors
• Theoretical Study of Recharging Instability in Quantum Well Infrared Photodetectors
• Recharging Instability and Periodic Domain Structures in Multiple Quantum Well Infrared Photodetectors
• Quasi-Static Analysis of Resonant Brillouin Scattering in ZnSe, ZnTe and CdS
• Scalability of Gate/N^- Overlapped Lightly Doped Drain in Deep-Submicrometer Regime
• Subquarter-micrometer Dual Gate Complementary Metal Oxide Semiconductor Field Effect Transistor with Ultrathin Gate Oxide of 2 nm
• Shubnikov de Haas Effect and Energy Band Structure of GaSb
• A Compact Plastic Package with High RF Isolation by Subsidiary Inner Ground Leads (Special Issue on High-Frequency/speed Devices in the 21st Century)
• High Field Transport of Hot Electrons in Strained Si/SiGe Heterostructure
• Temperature Dependence of Electron Mobility in Si Inversion Layers
• Magnetophonon Resonance in In_xCa_As (x=0.53) : Physical Acoustics
• Temperature Dependence of the Effective Masses in III-V Semiconductors
• Magnetic Field Modulation Method for Measurements of Magnetophonon Effect
• Simulation of Dopant Redistribution During Gate Oxidation Including Transient-Enhanced Diffusion Caused by Implantation Damage
• A Low Power 622MHz CMOS Phase-Locked Loop with Source Coupled VCO and Dynamic PFD (Special Section of Papers Selected from ITC-CSCC'96)
• Identification of Functionally Important Amino Acid Residues in Zymomonas mobilis Levansucrase
• A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance(Special lssue on Silicon RF Device & Integrated Circuit Technologies)
• Temperature Dependence of Raman Spectra in Si-doped GaAs/AlAs Multiple Quantum Wells
• Experimental Observation of Intersubband Excitations in Si-Doped GaAs/AlAs Multiple Quantum Wells
• Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
• Hot Electron Effect in Short n^+nn^ GaAs
• Electroreflectance Study of Cd_xHg_Te
• Optical Constants of HgTe and HgSe
• Electroreflectance Measurements on Cd_xHg_Te
• A-3-1 A 5Msample/s 0.965-mW Switched-Capacitor Filter in 0.6-μm CMOS Technology
• High-Sensitivity SOI MOS Photodetector with Self-Amplification
• High Sensitivity Photodetector with Self-Amplification Capability
• A Low Power Analog Matched-Filter with Smart Sliding Correlation
• Wannier-Stark Localization in Superlattices
• Brillouin Scattering Studies of Off-Axis Acoustoelectric Domains in CdS
• Photoluminescence Measurement in GaAs with High Spatial Resolution
• Effect of Uniaxial Stress on Photoluminescence spectrum of Si-Implanted GaAs Slice
• Brillouin Scattering in GaP
• Addendum to Brillouin Scattering in GaSe
• Velocity and Attenuation of Injected Sound Waves into ZnSe at Room Temperature
• Brillouin-Scattering Study on Mixing Effects of Acoustic Waves in Photoconductive CdS
• Resonant Brillouin Scattering by Acoustoelectrically Amplified Phonons in CdS
• Magnetoacoustoelectric Instability in Epitaxial GaAs
• Study of a Length Coefficient for an Extended Drift-Diffusion Model for Metal-Oxide-Semiconductor (MOS) Device Simulation
• Impact Ionization Model Using Average Energy and Average Square Energy of Distribution Function
• Novel Impact Ionization Model for Device Simulation Using Generalized Moment Conservation Equations
• A-5-3 Speed-Power-Resolution Tradeoff in Analog Correlator Circuit
• Direct Observation of Gaussian-Type Energy Distribution for Hot Electrons in Silicon
• Strain Evaluation at Si/Si0_2 Interface Using the Electroreflectance Method
• Temperature Dependence of k_BTC Noise in "Coulomb Blockade" Regime
• Theoretical Study of Minority Carrier Lifetimes due to Auger Recombination in n-type Silicon
• A Short Channel HEMT Model for Circuit Simulation Based on Physical Structure
• Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
• Increasing Atmospheric Temperature in the Upper Troposphere and Cumulus Convection over the Eastern Part of the Tibetan Plateau in the Pre-Monsoon Season of 2004(Coordinated Enhanced Observing Period(CEOP))
• Application of Kelvin Technique in A Gas-Sensor Read-Out Circuit
• A Switched-Capacitor Programmable Gain Amplifier Using Dynamic Element Matching
• Asymmetric Single Electron Turnstile and Its Electronic Circuit Applications (Special Issue on Technology Challenges for Single Electron Devices)
• Physical Models for Deep Submicron Device Simulation
• Floating Voltage Reference Generator for A/D Converters
• Magnetophonon Resonance at High Electric and Magnetic Fields in Small n^+nn^+ GaAs Structures
• A Self-Consistent Monte Carlo Simulation for Two-Dimensional Electron Transport in MOS Inversion Layer
• Fine structures in Optical Absorption Spectra of MnO

もっと見る 閉じる

スポンサーリンク