Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs : Effects of Substrate Impurity(<Special Issue>the IEEE International Coference on SISPAD '02)
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概要
- 論文の詳細を見る
Electron transport in bulk Si and MOSFET inversion layers is studied using an ensemble Monte Curio (EMC) technique coupled with the molecular dynamics (MD) method. The Coulomb interactions among point charges (electrons and negative ions) are directly taken into account in the simulation. It is demonstrated that the static screening of Coulomb interactions is correctly simulated by the EMC/MD method. Furthermore, we calculate the inversion layer mobility in Si MOSFETs, and mobility roll-off near the threshold voltage is observed by the present approach.
- 社団法人電子情報通信学会の論文
- 2003-03-01
著者
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Kamakura Y
Department Of Electronics And Information Systems Osaka University
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Kamakura Yoshinari
Department Of Electronics And Information Systems Osaka University
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Kamakura Yoshinari
Department Of Electronic Information And Energy Engineering Graduate School Of Eng. Osaka University
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RYOUKE Hironori
Department of Electronics and Information Systems,Osaka University
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Ryouke Hironori
Department Of Electronics And Information Systems Osaka University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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TANIGUCHI Kenji
Department of Electronics and Information Systems,Osaka University
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Kamakura Yoshinari
Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan
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