Grain Boundary Properties of Boron-Doped Polycrystalline Si1-XGeX Resistors with Small Process Fluctuation and Small Drift for High Precision Analog ICs
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概要
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The resistivity of poly-Si1-XGeX ($X=0.0$, 0.2, 0.4) films was studied in terms of process fluctuation and long-term stability. Experimental results demonstrated that poly-Si0.6Ge0.4 is superior to poly-Si because of its low process fluctuation of less than 3% across a wafer and significant reduction of resistivity-drift. The measured Hall mobility and trapping density reveal that the atomic configuration at the grain boundary of boron-doped poly-Si1-XGeX film differs from that of the conventional poly-Si film. Under hydrogen exposure, the electrical properties of poly-Si1-XGeX films in a wide range of carrier concentration are more stable than those of poly-Si, because of a smaller amount of dangling bonds, stronger bonding energy to hydrogen and more segregation of boron atoms at poly-Si1-XGeX boundaries. These results indicate that the poly-Si1-XGeX resistors are superior to poly-Si ones for obtaining high precision and low power analog circuits.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2003-04-15
著者
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Katoh Hidenori
Electronic Devices Company Ricoh Co. Ltd.
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Katoh Hidenori
Electronic Devices Company, Ricoh Co. Ltd., 13-1 Himemurocho, Ikeda, Osaka 563-8501, Japan
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Taniguchi Kenji
Department of Electronics and Information Systems, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Watanabe Hirobumi
Electronic Devices Company, Ricoh Co. Ltd., 13-1 Himemurocho, Ikeda, Osaka 563-8501, Japan
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Tamura Mitsuhiro
Department of Electronics and Information Systems, Faculty of Engineering, Osaka University, 2-1 Yamadaoka, Suita, Osaka 565-0871, Japan
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Dainin Masanori
Electronic Devices Company, Ricoh Co. Ltd., 13-1 Himemurocho, Ikeda, Osaka 563-8501, Japan
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Seto Masami
Electronic Devices Company, Ricoh Co. Ltd., 13-1 Himemurocho, Ikeda, Osaka 563-8501, Japan
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