Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling
スポンサーリンク
概要
- 論文の詳細を見る
A lightly doped drain (LDD) region, particularly a gate-overlapped LDD (GOLD) region, is subjected to a gate electric field and its gate-controlled resistance affects the device characteristics. We developed a new extraction method for determining the intrinsic characteristics of LDD MOSFETs using a simple series resistance model, in which the GOLD region is assumed to be a depletion MOSFET with a negative threshold voltage derived from $C$–$V$ measurement. Polycrystalline-silicon (poly-Si) TFTs with a channel length of 4–100 μm were used for the test LDD samples, particularly GOLD MOSFETs. It was demonstrated that the new proposed method precisely extracts the intrinsic characteristics of poly-Si GOLD TFTs by comparing them with the intrinsic characteristics of poly-Si Self-Aligned (SA) TFTs extracted by the conventional method.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
-
Matsuoka Toshimasa
Department Of Electronic Engineering Osaka University
-
MAEDA Kazuhiro
Development Engineering Department, System-LCD Division 1, Mobile-LCD Group, SHARP CORPORATION
-
KUBOTA Yasushi
Development Engineering Department, System-LCD Division 1, Mobile-LCD Group, SHARP CORPORATION
-
Tada Kenshi
Department Of Electronics And Information Systems Osaka University
-
Imai Shigeki
Advanced Technology Development Center Integrated Circuits Group Sharp Corporation
-
Sakai Tamotsu
Development Engineering Department System-lcd Division 1 Mobile-lcd Group Sharp Corporation
-
Taniguchi Kenji
Department Of Biotechnology Tottori University
-
Maeda Kazuhiro
Development Engineering Department, System-LCD Division 1, Mobile-LCD Group, SHARP CORPORATION, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
-
Matsuoka Toshimasa
Department of Electrical, Electronic and Information Engineering, Osaka University
-
Taniguchi Kenji
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
-
Kubota Yasushi
Development Engineering Department, System-LCD Division 1, Mobile-LCD Group, SHARP CORPORATION, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
-
Sakai Tamotsu
Development Engineering Department, System-LCD Division 1, Mobile-LCD Group, SHARP CORPORATION, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
-
Imai Shigeki
Advanced Technology Development Center, Integrated Circuits Group, SHARP CORPORATION, 2613-1 Ichinomotocho, Tenri, Nara 632-8567, Japan
-
Matsuoka Toshimasa
Department of Electronics and Information Systems, Osaka University, 2-1 Yamada-oka, Suita, Osaka 565-0871, Japan
関連論文
- 3P1-1 液晶等方相での超音波光回折(ポスターセッション)
- 弾性表面波法を利用したゲル状態変化に関する研究 : ゲルの乾燥過程や溶媒交換過程での応用(物性,一般)
- 23pYC-4 モード結合理論による電解質溶液のモル伝道度極小の出現機構(液体・溶液,領域12,ソフトマター物理,科学物理,生物物理)
- 23pRJ-17 高濃度電解質溶液の電気伝導度の理論計算 : 流体力学相互作用の効果(溶液・液体,領域12,ソフトマター物理,化学物理,生物物理)
- 21aTC-11 多価電解質水溶液のMHzからGHz領域に現れる緩和の理論的解析(溶液・液体,領域12,ソフトマター物理,化学物理,生物物理)
- 光-超音波・音響 分子配向の協同性の小さい異方性分子からなる液体における超音波回折光の偏光状態
- 超音波を利用した高分子の分解・重合 (特集 ソノケミストリー)
- M-1 カロリーメトリーによるソノリアクター用超音波振動子の評価(ソノ・ケミストリー)
- A-1 液晶等方相における超音波光回折の偏光状態(超音波物性・材料、フォノン)
- 液体中における超音波による配向誘起と回折光の偏光状態(一般・音波物性)
- 液体中における超音波による配向誘起と回折光の偏光状態
- 化学的定量法による円筒型超音波反応器の評価(ソノケミストリー,超音波キャビテーションの科学と応用論文特集)
- Surface Wave Velocity in Methylcellulose Hydrogel in the Drying Process
- 表面波速度測定によるハイドロゲルの弾性的性質の評価
- P3-71 KI定量法による円筒型超音波反応器の評価(ポスターセッション3(概要講演))
- J-4 異方性分子からなる液体における超音波回折光の偏光状態(光-超音波・光音響法)
- 20aXG-2 流動下にある流体の分子配向に関する分子動力学法による研究(溶液・液体,過冷却液体・ガラス,領域12(ソフトマター物理,化学物理,生物物理))
- 超音波基礎 液体中の超音波誘起複屈折の正弦成分の直接観察
- 単一気泡の化学作用 (特集 いろいろつかえるソノケミストリー(2))
- P3-5 音響的手法による補強剤配合SBRの評価(ポスターセッション3(概要講演))
- Effective Cancer Targeting Using an Anti-tumor Tissue Vascular Endotheliumm specific Monoclonal Antibody (TES-23)
- Influences of Point and Extended Defects on As Diffusion in Si(Structure and Mechanical and Thermal Properties of Condensed Matter)
- Process Variation Compensation Technique for 0.5-V Body-Input Comparator
- Process Variation Compensation Technique for Voltage-controlled Ring Oscillator
- Analytical Expression Based Design of a Low-Voltage FD-SOI CMOS Low-Noise Amplifier(Analog Circuit Techniques and Related Topics)
- Ultralow-Power Current Reference Circuit with Low Temperature Dependence(Building Block, Analog Circuit and Device Technologies)
- Watch-Dog Circuit for Quality Guarantee with Subthreshold MOSFET Current(New System Paradigms for Integrated Electronics)
- Watchdog Circuit for Product Degradation Monitor using Subthreshold MOS Current
- A New Analog Correlator Circuit for DS-CDMA Wireless Applications
- Error Analysis on Simultaneous Data Transfers in CDMA Wired Interface
- C-12-26 An Auto-sensitivity Control Circuit for DS-CDMA Receiver Circuit
- Influence of N_2O Oxynitridation on Interface Trap Generation in Surface-Channel p-Channel Metal Oxide Semiconductor Field Effect Transistors
- Influence of N_2O-Oxynitridation on Interface Trap Generation in Surface-Channel PMOSFETs
- Thickness Dependence of Furnace N_2O-Oxynitridation Effects on Breakdown of Thermal Oxides
- Temperature Dependence of Electron Mobility in InGaAs/InAlAs Heterostructures
- Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling
- Display Wall Empowered Visual Mining for CEOP Data Archive(Coordinated Enhanced Observing Period(CEOP))
- Initial CEOP-based Review of the Prediction Skill of Operational General Circulation Models and Land Surface Models(Coordinated Enhanced Observing Period(CEOP))
- Studies of Boron Segregation to {311} Defects in Silicon-Implanted Silicon
- Boron Segregation to {311} Defects Induced by Self-Implantation Damage in Si
- Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate
- Impact Excitation of Carriers in Diamond under Extremely High Electric Fields
- 13pTH-5 一般化ランジェバン理論に基づく不均一場下の液体のダイナミクスの理論(化学物理・理論, 領域 12)
- B-3 棒状ミセル水溶液におけるミセルモノマー交換反応による超音波緩和の観測(超音波物性・材料)
- 31pZD-5 液体の輸送物性に対する「異常な」圧力効果に関する理論的研究
- Hole Trapping and Detrappirug Characteristics Investigated by Substrate Hot-Hole Injection into Oxide of Metal-Oxide-Semiconduetor Structure
- Hot-Hole-Induced Interface State Generation in p-Channel MOSFETs with Thin Gate Oxide
- Evaluation of Spatial Distribution of Hole Traps Using Depleted Gate MOSFETs
- Analytical Device Model of SOI MOSFETs Including Self-Heating Effect
- Spatial Distribution of Trapped Holes in the Oxide of Metal Oxide Semiconductor Field-Effect Transistors after Uniform Hot-Hole Injection
- Existence of Double-Charged Oxide Traps in Submicron MOSFET's (SOLID STATE DEVICES AND MATERIALS 1)
- Interface State Generation Mechanism in MOSFET's during Substrate Hot-Electron Injection : Special Section : Solid State Devices and Materials 2 : Silicon Devices and Process Technologies
- Hot Electron Drift Velocity in AlGaAs/GaAs Heterojunctions : Electrical Properties of Condensed Matter
- Monte Carlo Study of Hot Electron Transport in Quantum Wells : Electrical Properties of Condensed Matter
- コヒーレントブリュアン散乱法による液体の超音波測定
- Boron Emission Rate from Si/SiO_2 Interface Traps to Bulk Silicon for Dose Loss Modeling
- Dependence of Gate Leakage Current on Location of Soft Breakdown Spot in Metal-Oxide-Semiconductor Field-Effect Transistor
- Effect of Oxide Breakdown on Complementary Metal Oxide Semiconductor Circuit Operation and Reliability
- A Study of Pre-Breakdown in Ultra-Thin Silicon Dioxide Films Using Carrier Separation Measurement
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Trap Density Dependent Inelastic Tunneling in Stress-Induced Leakage Current
- Ensemble Monte Carlo/Molecular Dynamics Simulation of Inversion Layer Mobility in Si MOSFETs : Effects of Substrate Impurity(the IEEE International Coference on SISPAD '02)
- New Nondestructive Carrier Profiling for Ion Implanted Si Using Infrared Spectroscopic Ellipsometry
- Crossover of Direct and Indirect Transitions in (GaAs)_m/(AlAs)_5 Superlattices (m=1-11)
- Photoreflectance and Photoluminescence Study of (GaAs)_m/(AlAs)_5 (m=3-11)Superlattices: Direct and Indirect Transition
- P1-B-14 弾性表面波によるガラス基板上の高分子薄膜の物性評価(超音波物性・材料,ポスターセッション1(概要講演))
- 研究ニュース 弾性表面波測定によるメチルセルロースゲルのずり弾性率測定
- PD08 超音波顕微鏡を用いた炭酸カルシウム分散PVC評価について(ポスターセッションI)
- 5-Hydroxytryptamine 1B receptors mediate presynaptic inhibition of monosynaptic IPSC in the rat dorsolateral septal nucleus
- Temperature Dependence of Electron Mobility in Si Inversion Layers
- A Low Power 622MHz CMOS Phase-Locked Loop with Source Coupled VCO and Dynamic PFD (Special Section of Papers Selected from ITC-CSCC'96)
- P1-18 液体の超音波誘起複屈折における非線形成分の検出(ポスターセッション1(概要講演))
- P2-15 低温領域におけるヒドロゲル中の音速度測定と水挙動研究への適用(ポスターセッション2,ポスター発表)
- P2-14 高分子複合材料の音波物性に及ぼす無機充填材の効果(ポスターセッション2,ポスター発表)
- Effect of Molecular Weight and Degree of Substitution on the Shear Modulus of Methyl Cellulose Gel by Means of Surface Wave Method (Short Note)
- Determining the Size of Colloidal Particles Using Ultrasonic Absorption Measurements
- Identification of Functionally Important Amino Acid Residues in Zymomonas mobilis Levansucrase
- A Low-Voltage SOI-CMOS LC-Tank VCO with Double-Tuning Technique Using Lateral P-N Junction Variable Capacitance(Special lssue on Silicon RF Device & Integrated Circuit Technologies)
- Novel Method of Modulation Spectroscopy for Heterostructures: Electro-Photoreflectance
- PA18 表面波測定によるPAAゲルの物性評価(基礎・物性,ポスターセッション2)
- PA6 過冷却状態におけるテトラエチレングリコールの局所構造と構造緩和との相関(ポスターセッション2)
- Depolarized Light Scattering of Liquid Crystals with Addition of Carbon Tetrachloride in the Isotropic Phase
- Electroreflectance Study of Cd_xHg_Te
- Optical Constants of HgTe and HgSe
- Electroreflectance Measurements on Cd_xHg_Te
- A Low Power Analog Matched-Filter with Smart Sliding Correlation
- P1-7 弾性表面波法によるメチルセルロースゲルのずり弾性率に対する置換度と分子量の効果の研究(ポスターセッション1,ポスター発表)
- A-5-3 Speed-Power-Resolution Tradeoff in Analog Correlator Circuit
- Temperature Dependence of k_BTC Noise in "Coulomb Blockade" Regime
- Investigation of Degradation in Homoepitaxially Grown ZnCdSe/ZmSe Light Emitting Diode
- Application of Kelvin Technique in A Gas-Sensor Read-Out Circuit
- Linear and Nonlinear UItrasonically Induced Birefringence in Polymer Solutions
- The Vibrational-Translational Energy Transfer in Binary Mixtures: Influence of the Vibrational Mode Close to the Lowest Mode in Group Relaxation
- Local Structures and Structural Relaxation Processes in Supercooled Tetra(ethylene glycol)
- B-4 高分子溶液における超音波誘起複屈折に対する超音波放射圧の効果
- 超音波誘起複屈折からみた巨大分子のダイナミクス
- A Switched-Capacitor Programmable Gain Amplifier Using Dynamic Element Matching
- PA18 ラテックス粒子の超音波による粒径測定(ポスターセッション2)
- コロイドの複屈折を超音波で起こす
- Novel Method of Intrinsic Characteristic Extraction in Lightly Doped Drain Metal Oxide Semiconductor Field Effect Transistors for Accurate Device Modeling