Boron Accumulation in the {311} Defect Region Induced by Self-Implantation into Silicon Substrate

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文
• 1998-08-01

著者

• Aoki T

  Research Institute Of Electronics Shizuoka University

• TANIGUCHI Kenji

  Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co

• Aoki Toru

  Research Institute Of Electronics Shizuoka University

• Kamakura Y

  Department Of Electronics And Information Systems Osaka University

• Kamakura Yoshinari

  Department Of Electronics And Information Systems Osaka University

• Kamakura Yoshinari

  Department Of Electronic Information And Energy Engineering Graduate School Of Eng. Osaka University

• SAITO Tomoya

  Department of Tropical Medicine and Parasitology, School of Medicine, Keio University

• Aoki T

  Department Of Electrical Engineering And Electronics College Of Engineering Osaka Sangyo University

• XIA Jianxin

  Department of Electronics and Information Systems, Osaka University

• AOKI Takenori

  Department of Electronics and Information Systems, Osaka University

• Xia Jianxin

  Department Of Electronics And Information Systems Osaka University

• Xia Jianxin

  Department Of Dermatology Graduate School Of Medical Sciences Kyushu University

• Aoki T

  Department Of Electronics And Information Systems Osaka University

• Saito T

  Process And Manufacturing Engineering Center Semiconductor Company Toshiba Corp.

• Aoki T

  Jamstec

• Saito Tomoya

  Department Of Communication Engieering Okayama Prefectural University

• Saito T

  School Of Engineering Nagoya University

• Taniguchi Kenji

  Department Of Biotechnology Tottori University

• Kamakura Yoshinari

  Department of Electronic Engineering, Osaka University, Suita, Osaka 565-0871, Japan

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