Atomic configuration of boron pile-up at the Si/SiO2 interface
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概要
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The thermo dynamical stability of a boron atom at the Si/SiO2 interface was studied by using ab initio calculation to investigate a mechanism of boron pile-up at the interface during thermal annealing. The B atom is stable in bulk Si site of the interface without any interface defect, which contradicts the experimental observations. By introducing an oxygen vacancy at the interface, the mechanism of B segregation into SiO2 layer at the atomic scale was verified.
- （社）電子情報通信学会の論文
著者
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TSUJI Hiroshi
Department of Electronic Science and Engineering, Kyoto University
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Hirose Tetsuya
Department of Electrical and Electronics Engineering, Kobe University
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Tsuji Hiroshi
Department Of Electronics And Information Systems Osaka University
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Furuhashi Masayuki
Department of Electronics and Information Systems, Osaka University
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Tachi Masayuki
Department of Electronics and Information Systems, Osaka University
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