Fabrication of Cone-Shaped Metal-Insulator-Semiconductor Electron Tunneling Cathode
スポンサーリンク
概要
- 論文の詳細を見る
A new cone-shaped metal-insulator-semiconductor (MIS) cathode with an outside electrode is proposed for vacuum microelectronics devices. This cathode has larger emission current and higher transfer ratio (the ratio ofelectron emission current to the diode current) than those of the conventional MIS cathodes. In the present paper,the general concept of this new cathode is presented. To ensure the effectiveness of the electrode configuration, the cathode performance was investigated with a cone-shaped MIS cathode. The fundamental characteristics of this cathode were measured. The emission into vacuum was confirmed and the transfer ratio of about 10^-3 at maximum was obtained.
- 社団法人応用物理学会の論文
- 1994-12-30
著者
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TSUJI Hiroshi
Department of Electronic Science and Engineering, Kyoto University
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GOTOH Yasuhito
Department of Electronic Science and Engineering, Kyoto University
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ISHIKAWA Junzo
Department of Electronics and Information Engineering, Chubu University
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Gotoh Y
Tsukuba Univ. Ibaraki Jpn
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Gotoh Yasuhito
Department Of Electronic Science And Engineering Kyoto University
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Gotoh Yoshikazu
Information Equipment Research Laboratory
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Inoue Kazunori
Department Of Biomolecular Science Faculty Of Engineering Gifu University
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Tsuji Hiroshi
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Ishikawa Junzo
Department of Electronic Science and Engineering, Kyoto University,
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