Yield Measurement of Secondary Electrons Emitted from Silicon Dioxide Film in Negative-Ion Bombardment

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概要

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• The yield of secondary electrons emitted from insulating materials subjected to negative-ion bombardment was studied. In general, such measurements for insulating materials are difficult because surface charging due to ion implantation makes the apparent yield unity. We used silicon dioxide (SiO2) film and a small ion current for the yield measurements. As a result, charge compensation due to the leakage current minimized the surface charging and the true yield was obtained. The experimental results showed that secondary electrons emitted due to negative-ion bombardment consist of electrons due to both kinetic emission and detachment from negative ions. In addition, it was found that the yield depends on the ion species. It was concluded that the same tendencies as those for negative-ion-implanted conductive materials are observed.

• Publication Office, Japanese Journal of Applied Physics, Faculty of Science, University of Tokyoの論文
• 1996-09-15

著者

• ISHIKAWA Junzo

  Department of Electronics and Information Engineering, Chubu University

• Gotoh Yasuhito

  Department Of Electronic Science And Engineering Kyoto University

• Toyota Yoshitaka

  Department Of Communication Network Engineering Okayama University

• Tsuji Hiroshi

  Department Of Applied Physics Faculty Of Engineering Osaka City University

• Gotoh Yasuhito

  Department of Electronic Science and Engineering, Kyoto University,

• Ishikawa Junzo

  Department of Electronic Science and Engineering, Kyoto University,

• Toyota Yoshitaka

  Department of Electronic Science and Engineering, Kyoto University,

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