Anomalous Uphill Diffusion and Dose Loss of Ultra-Low-Energy Implanted Boron in Silicon during Early Stage of Annealing
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概要
- 論文の詳細を見る
Uphill diffusion of boron implanted with 0.5 keV in silicon was investigated under nonamorphizing implant conditions. Postimplantation annealing at temperatures above 400°C induces the uphill diffusion of boron, which can be observed in an initial stage of annealing. The uphill diffusion is significantly suppressed by additional Si implantation into the boron implant region, suggesting that the uphill diffusion is mediated by the excess free self-interstitials during the annealing. Also, the uphill diffusion causes severe dose loss of implanted boron to the Si/SiO2 interface.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2004-03-15
著者
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Tachi Masayuki
Department Of Electronics And Information Systems Osaka University
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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Tsuji Hiroshi
Department Of Applied Physics Faculty Of Engineering Osaka City University
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Furuhashi Masayuki
Department Of Electronics And Information Systems Osaka University
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Furuhashi Masayuki
Department of Electronics and Information Systems, Osaka University, Osaka 565-0871, Japan
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Taniguchi Kenji
Department of Electronics and Information Systems, Osaka University, Osaka 565-0871, Japan
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Tsuji Hiroshi
Department of Electronics and Information Systems, Osaka University, Osaka 565-0871, Japan
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