Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
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概要
- 論文の詳細を見る
We present for the first time a theoretical approach to electrical deactivation by triply negative charged Ga vacancies (V^<3->_<Ga>) in highly doped thin n-GaAs layers grown by molecular beam epitaxy, and quantify their deactivation under as-grown and annealed conditions. We also show that thinning of n-GaAs epitaxial layers results in low-level electrical deactivation. This effect is apparently caused by the fact that thinning of the doped layers results in lowering of the Fermi energy in the doped layers, and thereby inhibition of the generation of V^<3->_<Ga> acceptors. Furthermore, we deduce from the results of this study the thermal equilibrium concentration of V^<3->_<Ga> in intrinsic GaAs. The resulting expression is [^<3->_<Ga>(i)]=5.37×10^<31>exp(-4.64eV/k_BT)cm^<-3>.
- 社団法人応用物理学会の論文
- 1997-03-30
著者
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TANIGUCHI Kenji
Department of Cancer Research, Fuji Gotemba Research Laboratories, Chugai and Pharmaceutical Co
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Sawai Tetsuro
Microelectronics Research Center, SANYO Electric Co.,Ltd
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Sawai Tetsuro
Microelectronics Research Center Sanyo Electric Co. Ltd
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Sawai Tetsuro
Microelectronics Research Center Sanyo Electric Co. Ltd.
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MATSUSHITA Shigeharu
Microelectronics Research Center, SANYO Electric Co., Ltd.
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INOUE Daijiro
Microelectronics Research Center, SANYO Electric Co., Ltd.
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MATSUMURA Kohji
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Inoue Daijiro
Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
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Matsushita Shigeharu
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Matsumura K
Microelectronics Research Center Sanyo Electric Co. Ltd.
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IBARAKI Akira
Microelectronics Research Center, SANYO Electric Co., Ltd.
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Ibaraki Akira
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Inoue Daijiro
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Matsumura Kiichiro
Pioneering Research And Development Laboratories Toray Industries Inc.
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Taniguchi Kenji
Department Of Electronic Device Engineering Graduate School Of Information Science And Electrical En
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Taniguchi Kenji
Department Of Biotechnology Tottori University
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