Doping of Poly-p-Phenylenesulfide (PPS) with AlCl_3, FeCl_3 and TaF_5
スポンサーリンク
概要
- 論文の詳細を見る
Poly-p-phenylene sulfide (PPS) can be doped rapidly with AlCl_3, FeCl_3 and TaF_5 from solution to give electrically conductive (3.0×10^<-1>S/cm, 3.4×10^<-3>S/cm, and 6.5×10^<-2>S/cm, respectively) polymers. Using these dopants, the effect of morphology in starting polymers on the doping process was investigated. The results from doping of PPS with different crystallinity suggest that doping proceeds in the amorphous region in PPS.
- 社団法人応用物理学会の論文
- 1984-08-20
著者
-
Tsukamoto Jun
Polymers Research Laboratories, Toray Industries Inc.
-
Tsukamoto Jun
Pioneering Research And Development Laboratories Toray Industries Inc.
-
Matsumura K
Microelectronics Research Center Sanyo Electric Co. Ltd.
-
Matsumura Kiichiro
Pioneering Research And Development Laboratories Toray Industries Inc.
関連論文
- Calculation of Exoelectron Glow Curves
- Non-Linear Electrical Conductivity of Highly Conducting Iodine-Doped Polyacetylene
- Low Temperature Magnetoresistance of Iodine-Doped Polyacetylene in Metal-Nonmetal Transition Region
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors
- Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition
- A New High Electron Mobility Transistor (HEMT) Structure with a Narrow Quantum Well Formed by Inserting a Few Monolayers in the Channel
- Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
- Doping of Poly-p-Phenylenesulfide (PPS) with AlCl_3, FeCl_3 and TaF_5
- XPS, IR and ^C-NMR Spectra of TaF_5-Doped Poly-phenylenesulfide