A New High Electron Mobility Transistor (HEMT) Structure with a Narrow Quantum Well Formed by Inserting a Few Monolayers in the Channel

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Evidence of Anisotropic Diffusion of Indium Atoms on a Surface of Perylene-3,4,9,10-tetracarboxilic dianhydride/MoS_2 System Observed by Photoelectron Emission Microscopy (PEEM)
Growth of CuPc Thin Films on Structured SiO_2/Si(100) Studied by Metastable Electron Emission Microscopy and Photoelectron Emission Microscopy
Dynamics of Picosecond Laser-Generated Acoustic Waves in Solids : Photoacoustic Spectroscopy
Surface Transformations in Glass Initiated by Laser-Driven Shock : High Power Ultrasonics
Calculation of Exoelectron Glow Curves
Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WN_x Gate Formation
Improved Metal Gate Process by Simultaneous Gate-Oxide Nitridation during W/WNx Gate Formation
Surface Images of SiO_2/Si(100) Pattern using Electron Emission Microscopy with Metastable Atoms, Photons and Low-Energy Electrons
Molecular Orientation and Aggregation of Titanyl Phthalocyanine Molecules on Graphite Substrates: Effects of Surface Topography of the Substrate
Reaction at the Outermost Surface Selectively Induced by Metastable-Atom Beams
Surface States of Hydrogen-terminated Si(111)by Metastable Atom Electron Spectroscopy and Angle-resolved Ultraviolet Photoelectron Spectroscopy
Thickness-Dependent Orientation of the Pendant Phenyl Group at the Surface of Polystyrene Thin Films
Low-Energy Electron Transmission Spectroscopy of Thin Films of Chloroaluminum Phthalocyanine on MoS_2
Initial Stage of Oxidation of Si(001)-2 × Surface Studied by X-Ray Photoelectron Spectroscopy
Initial Stage of Oxidation of Si(001)-2x1 Surface Studied by X-Ray Photoelectron Spectroscopy
Impact of Structural Strained Layer near SiO_2/Si Interface on Activation Energy of Time-Dependent Dielectric Breakdown
Heteroepitaxial Growth of CuGaS_2 Layers by Low-Pressure Metalorganic Chemical Vapor Deposition
2.51 eV Donor-Acceptor Pair Photoluminescence from Zn-Doped CuAlSe_2 Epilayer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
Low-Pressure Metalorganic Chemical Vapor Deposition of CuAlSe_2 Epitaxial Films
In-Situ Observation of Oxygen Exposed Hydrogen Terminated Silicon Surfaces
Low-Pressure Metalorganic Chemical Vapor Deposition of a CuGaSe_2/CuAlSe_2 Heterostructure
He I Photoelectron Spectra of Permethylated Polygermanes
The Optimum Design of Thin Film Transistors by Dynamic Characteristics Measurement
Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors
Excellent Thermally-Stable Epitaxial Channel for Implanted Planar-Type Hetero-Junction Field-Effect Transistors
Relationship between Low-Noise Performance and Electron Confinement in the Channel of Two-Mode Channel Field-Effect Transistors in a Low-Drain-Current Condition
New Plamar Two-Mode Channel Field-Effect Transistor Suitable for L-Band Microwave Monolithic Integrated Circuits with RF Transmission and Reception Blocks Operating at V_≤2 V
A Superlow-Noise AlGaAs/InGaAs/GaAs Doped Channel Heterojunction Field-Effect Transistor (DC-HFET) with 0.15-μm Gate Length
A New High Electron Mobility Transistor (HEMT) Structure with a Narrow Quantum Well Formed by Inserting a Few Monolayers in the Channel
Sample Preparation and Photoluminescence of ZnO Particles Embedded in Thin Alkali Halide Crystals
A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)
Reduction in Operating Current of High-Power 660nm Laser Diodes Using a Transparent AlGaAs Cap Layer
Reduction in Operating Current of High-Power 660-nm Laser Diodes Using a Transparent AlGaAs Cap Layer
Quantification of Electrical Deactivation by Triply Negative Charged Ga Vacancies in Highly Doped Thin GaAs Layers
High-Power 660-nm-Band AlGaInP Laser Diodes with a Small Aspect Ratio for Beam Divergence
Doping of Poly-p-Phenylenesulfide (PPS) with AlCl_3, FeCl_3 and TaF_5
XPS, IR and ^C-NMR Spectra of TaF_5-Doped Poly-phenylenesulfide
High-Power 200 mW 660 nm AlGaInP Laser Diodes with Low Operating Current
Excellent Thermally Stable Epitaxial Channel for Implanted Planar-Type Heterojunction Field-Effect Transistors

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