A High Power-Added Efficiency GaAs Power MESFET and MMIC Operating at a Very Low Drain Bias for Use in Personal Handy Phones (Special Issue on Microwave and Millimeter-Wave Technology for Advanced Functioions and Size-Reductions)

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A 170-mW class GaAs Power MESFET and a -mW class MMIC pre-amplifier operating at very low drain bias have been developed for use in personal handy phones (PHP). The MESFET provided P_<0(1dB)>=22.5 dBm, η_<add>=38.8% at V_<DS>=3 V with I_<DS>=0.14 A (〜0.4I_<DSS>) at 1.9 GHz, and also provided P_<0(1dB)>=22.4 dBm, η_<add>=32.6% at V_<DS>=2 V with I_<DS>=.24 A (〜0.6I_<DSS>). The MMIC using the same MESFET structure had a linear power gain of 13 dB, a linear output power of more than 10 dBm, and P_<0(1dB)>=13.7 dBm, η_<add>=24.3% at V_<DD>= V with I_D=30 mA at 1.9 GHz. The MESFET had a buried p-layer and our improved LDD n^+ self-aligned structure both of which were optimized so as to satisfy a high V_<(BR)GDO> of more than V, a minimized bias dependence of S-parameters and low V_K of less than 0.5 V.
社団法人電子情報通信学会の論文
1993-06-25