SAWADA Minoru | Semiconductor Research Center, SANYO Electric Co., Ltd.
スポンサーリンク
概要
関連著者
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Harada Y
Univ. Tokyo Tokyo Jpn
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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Harada Y
Life Culture Department Seitoku University
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Sawada M
Materials And Devices Development Center Business Unit Sanyo Electric Co. Ltd.
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INOUE Daijiro
Microelectronics Research Center, SANYO Electric Co., Ltd.
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SAWADA Minoru
Semiconductor Research Center, SANYO Electric Co., Ltd.
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INOUE Daijiro
Semiconductor Research Center, SANYO Electric Co., Ltd.
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HARADA Yasoo
Semiconductor Research Center, SANYO Electric Co., Ltd.
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Inoue Daijiro
Materials & Devices Development Center Bu Sanyo Electric Co. Ltd.
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Nakamoto Hiroyuki
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Nishida Masao
Semiconductor Research Center Sanyo Electric Co. Ltd.
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NAKAKADO Takashi
Semiconductor Research Center, Sanyo Electric Co., Lid.
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MATSUMURA Kohji
Microelectronics Research Center, SANYO Electric Co., Ltd.
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NAGAMI Kimihiki
Semiconductor Research Center, SANYO Electric Co., Ltd.
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KAIZAKI Yasuhiro
Semiconductor Research Center, SANYO Electric Co., Ltd.
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Matsumura Kohji
Semiconductor Research Center, SANYO Electric Co., Ltd.
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Nakano Haruo
Semiconductor Research Center, SANYO Electric Co., Ltd.
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Matsumura K
Microelectronics Research Center Sanyo Electric Co. Ltd.
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Nagami Kimihiki
Semiconductor Research Center Sanyo Electric Co. Ltd.
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Kaizaki Yasuhiro
Semiconductor Research Center Sanyo Electric Co. Ltd.
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Nakakado Takashi
Semiconductor Research Center Sanyo Electric Co. Ltd.
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Matsumura Kiichiro
Pioneering Research And Development Laboratories Toray Industries Inc.
著作論文
- A Superlow-Noise AlGaAs/InGaAs/GaAs Doped Channel Heterojunction Field-Effect Transistor (DC-HFET) with 0.15-μm Gate Length
- A New High Electron Mobility Transistor (HEMT) Structure with a Narrow Quantum Well Formed by Inserting a Few Monolayers in the Channel