2.51 eV Donor-Acceptor Pair Photoluminescence from Zn-Doped CuAlSe_2 Epilayer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1993-12-30
著者
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Isomura S
Ehime Univ. Ehime Jpn
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SHIRAKATA Sho
Faculty of Engineering Science, Osaka University
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CHICHIBU Shigefusa
Institute of Applied Physics, University of Tsukuba
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Matsumoto S
Faculty Of Science And Technology Keio University
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Matsumoto Satoru
Department Of Electronics And Electrical Engineering Keio University
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MATSUMOTO Satoru
Faculty of Science and Technology, Keio University
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ISOMURA Shigehiro
Faculty of Engineering Ehime University
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Harada Y
Univ. Tokyo Tokyo Jpn
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corporation
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Harada Yoshinao
Ulsi Process Technology Development Center Matsushita Electronics Corp.
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CHICHIBU Shigefusa
Faculty of Science and Technology, Science University of Tokyo
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UCHIDA Mei
Faculty of Science and Technology, Keio University
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HARADA Yoshiyuki
Faculty of Science and Technology, Keio University
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HIGUCHI Hirofumi
Bentec Corporation
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SUDO Ryo
Faculty of Science and Technology, Keio University
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Sudo Ryo
Faculty Of Science And Technology Keio University
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Harada Y
Life Culture Department Seitoku University
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Matsumoto S
Ntt Telecommunications Energy Laboratories
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Shirakata Sho
Faculty Of Engineering Ehime University
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Chichibu S
Institute Of Applied Physics University Of Tsukuba
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Chichibu S
Institute Of Applied Physics And Graduate School Of Pure And Applied Sciences University Of Tsukuba
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Higuchi H
Matsushita Battery Industrial Co. Ltd. Osaka Jpn
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Uchida M
Matsushita Electric Industrial Co. Ltd. Kyoto Jpn
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Matsumoto Satoru
Faculty Of Science And Technology Keio University
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ISOMURA Shigehiro
Faculty of Engineering , Ehime University
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