Infrared Absorption Spectrum of GaInNAs

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概要

• 論文の詳細を見る
• 2003-07-15

著者

• Kondow M

  Central Research Laboratory Hitachi Ltd.

• KONDOW Masahiko

  Central Research Laboratory, Hitachi, Ltd.

• KITATANI Takeshi

  Central Research Laboratory, Hitachi, Ltd.

• SHIRAKATA Sho

  Faculty of Engineering Science, Osaka University

• Kondow M

  Hitachi Ltd. Tokyo Jpn

• Kondow Masahiko

  Graduate School Of Engineering Osaka University

関連論文

• Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
• Variation in Photoluminescence of Highly Strained GaInNAs/GaAs Multiple-Quantum-Well Structures with Different Thickness GaAs Barrier Layers(Semiconductors)
• Transition of Infrared Absorption Peaks in Thermally Annealed GaInNAS : Optics and Quantum Electronics : Optical Properties of Condensed Matter
• Analysis of Band Offset in GaNAs/GaAs by X-Ray Photoelectron Spectroscopy
• Temperature Dependence of the Threshold Current and the Lasing Wavelength in 1.3-μm GaIn N As/GaAs Single Quantum Well Laser Diode
• Index-Guide GaInNAs Laser Diode for Optical Communications
• Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
• LPE Growth of InGa_xP_As_on GaAs Substrate by Two-Phase Melt Method.
• Widely Tunable Integrated DBR Laser Array with Fast Wavelength Switching
• Nitrogen Gas Flow Driven Unintentional Incorporation of Al during the Growth of Dilute Nitride Semiconductor by Plasma-Assisted Molecular Beam Epitaxy
• Raman Spectra of CuInSe_2 Thin Films Prepared by Chemical Spray Pyrolysis
• Room-Temperature Photoreflectance of CuAl_xGa_Se_2 Alloys
• Crystal Growth and Optical Properties of CuAl(S_xSe_)_2 Alloys
• Electroreflectamce of CuInSe_2 Single Crystals
• Visible and Ultraviolet Photoluminescence from Cu-III-VI_2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
• Visible and Ultraviolet Photoluminescence from Cu-III-VI_2 Chalcopyrite Semiconductors Grown by Metalorganic Vapor Phase Epitaxy
• Heteroepitaxial Growth of CuGaS_2 Layers by Low-Pressure Metalorganic Chemical Vapor Deposition
• Zn-Related Donor-Acceptor Pair Emission in CuAlSe_2 Epitaxial Layers
• Preparation and Characterization of Cu(Al, Ga)(S, Se)_2 Penternary Alloys
• 2.51 eV Donor-Acceptor Pair Photoluminescence from Zn-Doped CuAlSe_2 Epilayer Grown by Low-Pressure Metalorganic Chemical Vapor Deposition
• Photoreflectance Characterization of CuAlSe_2 Heteroepitaxial Layers Grown by Metalorganic Chemical Vapor Deposition
• Low-Pressure Metalorganic Chemical Vapor Deposition of CuAlSe_2 Epitaxial Films
• Photoluminescence and Photoreflectance of CuGa(S_Se_x)_2 and Cu(Ga_In_x)S_2 Alloys
• Preparation of CuInSe_2 Films by Slenization of CuInPrecursor in Vacuum Chamber
• Photoreflectance and Photoluminescence Studies of CuAl_xGa_Se_2 Alloys
• Photoreflectance Study of CuAlSe_2 Heteroepitaxial Layers
• Recent Progress in GaInNAs Laser(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• A 1.3-μm GaInNAs/GaAs Single-Quantum-Well Laser Diode with a High Characteristic Temperature over 200 K
• A 1.3-μm GaInNAs Laser Diode with a Lifetime of over 1000 Hours
• Yb-Related Photoluminescence in CuGaS_2, AgGaSe_2 and AgGaS_2
• Metalorganic Vapor Phase Epitaxy of InAs Layers on GaAs Substrates Using Low-Temperature Growth of InGaAs Graded Buffer Layers
• Local Structure of CuInSe_2 Thin Film Studied by EXAFS
• Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
• Very-Low-Current and High-Speed Switching Operation of InAlGaAs/InAlAs/InP Mach-Zehnder Interferometer-Type Photonic Switch
• Reduced Static Dielectric Constant Estimated from Exciton Binding Energy in Dilute Nitride Semiconductors
• Photoluminescence Studies in CuAlS_2 Crystals
• Molecular Bearm Epitaxy of CuGaSe_2 on GaAs Substrate Using Metalorganic Copper and Gallium Precursors
• Photoluminescence Line at 2.29 eV in CuGaS_2 Crystal
• Polarized Near-Band Edge Photoluminescence in CuGaS_2 Single Crystal
• Photoluminescence in CuGaS_2 Crystals Grown by Iodine-Transport Method
• Electroreflectance and Photoluminescence Studies of In_Ga_xP_As_y Lattice-Matched to GaAs
• A Study on LPE Growth of IN_Ga_xPAs_y(y≃0) on (100) GaAs Substrate
• Properties of Cu(In, Ga)Se_2 Thin Films Prepared by Chemical Spray Pyrolysis
• Photoacoustic Spectra of CuInSe_2 Thin Films Prepared by Chemical Spray Pyrolysis
• Decay Characteristics of Photoluminescence Lines in CuGaS_2 Crystals
• Metalorganic Molecular Beam Epitaxy of CuInSe_2 on GaAs Substrate
• Preparation of SnO_2 Thin Films by Plasma-Assisted Metalorganic Chemical Vapor Deposition
• Preparation of CuInSe_2 Thin Films by Chemical Spray Pyrolysis
• Preparation of SnO_2/CuInSe_2 Heterojunction
• Investigation of the Electron Nonradiative Transition in Extremely Thin GaInNAs/GaAs Single Quantum Well by Using a Piezoelectric Photothermal Spectroscopy
• Unintentional source incorporation in plasma-assisted molecular beam epitaxy
• Effect of plasma conditions on the growth of GaNAs by plasma-assisted molecular-beam epitaxy
• Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
• Infrared Absorption Spectrum of GaInNAs
• Excitation Intensity Dependence of Photoluminescence Spectra in GaInNAs Single Quantum Wells (Short Note)
• Index-Guide GaInNAs Laser Diode for Optical Communications
• GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
• Compact and Low-Power-Consumption 40-Gbit/s, 1.55-μm Electro-Absorption Modulators(Optical Active Devices and Modules, Recent Progress in Optoelectronics and Communications)
• Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
• 3d-Transition Metal Related Photoluminescence in In_Ga_xP Alloys
• Reduction of $S$-parameter by the Introduction of Nitrogen in GaNAs: Positron Annihilation and Photoluminescence Spectroscopy Study
• Gas-Source Molecular Beam Epitaxy of GaN_xAs_ Using a N Radical as the N Source
• Introduction of GaInNAs Gain Medium into Circularly Arranged Photonic Crystal Cavity
• Unintentional Source Incorporation in Plasma-Assisted Molecular Beam Epitaxy
• Over 1.5 μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication
• Characterization of the Oxide Film Obtained by Wet Oxidation of Al-Rich AlGaAs
• Over 1.5μm Deep Dry Etching of Al-Rich AlGaAs for Photonic Crystal Fabrication (Special Issue : Solid State Devices and Materials)

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