Widely Tunable Integrated DBR Laser Array with Fast Wavelength Switching

スポンサーリンク

概要

• 論文の詳細を見る
• 2007-09-19

著者

• AOKI Masahiro

  Central Research Laboratory, Hitachi, Ltd.

• KITATANI Takeshi

  Central Research Laboratory, Hitachi, Ltd.

• TSUJI Shinji

  Central Research Laboratory, Hitachi, Ltd.

• SHINODA Kazunori

  Central Research Laboratory, Hitachi, Ltd.

• Arimoto Hideo

  Central Research Laboratory Hitachi Ltd.

• Tsuji S

  Hitachi Ltd. Kokubunji‐shi Jpn

• Tsuji Shinji

  Central Research Laboratory Hitachi Ltd.

• TSUCHIYA Tomonobu

  Central Research Laboratory, Hitachi, Ltd.

• OTOSHI Tsukuru

  Central Research Laboratory, Hitachi, Ltd.

• Otoshi Tsukuru

  Central Research Laboratory Hitachi Ltd.

• Aoki M

  Hitachi Ltd. Central Research Laboratory

• Tsuji Shinji

  Discovery Research Laboratories Iv Pharmaceutical Discovery Research Division Takeda Chemical Indust

• Tsuchiya Tomonobu

  Central Research Laboratory Hitachi Ltd

• Aoki Masahiro

  Hitachi Ltd. Central Research Laboratory

• Aoki M

  Univ. Tsukuba Shizuoka Jpn

• Kitatani Takeshi

  Central Research Laboratory Hitachi Ltd.

• Shinoda Kazunori

  Hitachi Ltd. Central Research Laboratory

• Kitatani Takeshi

  Hitachi Ltd. Central Research Laboratory

• Shinoda Kazunori

  Central Research Laboratory Hitachi Ltd.

• Aoki Masahiro

  Central Research Laboratory Hitachi Ltd.

• Shinoda Kazunori

  Central Research Laboratory Hamamatsu Photonics K. K.

関連論文

• Amplified Spontaneous Enission Measurement of GaInNAs Laser Wafers With and without Rapid Thermal Annealing
• Characterization of the Refractive Index of Strained GaInNAs Layers by Spectroscopic Ellipsometry
• Room-Temperature Pulsed Operation of GaInNAs Laser Diodes with Excellent High-Temperature Performance
• A 35-GHz, 0.8-A/W and 26-µm Misalignment Tolerance Microlens-Integrated p-i-n Photodiodes
• 545nm Room-Temperature Continuous-Wave Operation of BeZnCdSe Quantum-Well Green Laser Diodes with Low Threshold Current Density
• Renaturation of Recombinant Human Neurotrophin-3 from Inclusion Bodies
• An Efficient Chemical Method for Removing N-terminal Extra Methionine from Recombinant Methionylated Human Growth Hormone
• Accelerated Aging Characteristics of InGaAsP/InP Buried Heterostructure Lasers Emitting at 1.3μm
• Widely Tunable Integrated DBR Laser Array with Fast Wavelength Switching
• Numerical Analysis of Beam-Expanders Integrated with Laser Diodes(Special Issue on Advanced Optical Devices for Next Generation Photonic Networks)
• Laser Diode Integrated with a Low Radiation Loss Thickness-Tapered Beam Expander for Highly Efficient Fiber Coupling
• Beam Expander-Integrated Lasers Grown by Single-Step MOVPE
• Highly Reliable Operation of InGaAlAs Waveguide Photodiodes for Optical Access Network Systems
• High Responsivity, Low Dark Current, and Highly Reliable Operation of InGaAIAs Waveguide Photodiodes for Optical Hybrid Integration (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
• Passive Aligned Hybrid Integrated WDM Transceiver Module Using Planar Lightwave Circuit Platform (Special Issue On Devices, Packaging Technology, and Subsystems for the Optical Access Network)
• Passive Coupling of a Single Mode Optical Waveguide and a Laser Diode/Waveguide Photodiode for a WDM Transceiver Module (Special Issue on Optical Access Networks toward Life Enhancement)
• InGaAsP/InP Laser Diodes Mounted on Semi-Insulating SiC Ceramics : B-2: LD AND LED-1
• Fundamental Properties and Characteristics of a Gas-Sensitive Device, Made of a Surface Acoustic Wave Device and Langmuir-Blodgett Film, Used in a Recognition System for Odoriferous Gases
• Gassensitivity of Modified Surfaces of a Surface Acoustic Wave Device by Chemical Adsorption Technique and Langmuir-Blodgett Technique
• Anode Electropolished Stainless Steel with an Oxidized Surface as a New Substrate Material for the Langmuir-Blodgett Technique
• In Situ X-Ray Monitoring of Metalorganic Vapor Phase Epitaxy
• Threading Dislocation Reduction in InP on GaAs by Thin Strained Interlayer and its Application to the Fabrication of 1.3-μm-Wavelength Laser on GaAs
• Changes in Targeting Efficiencies of Proteins to Plant Microbodies Caused by Amino Acid Substitutions in the Carboxy-terminal Tripeptide
• Photocurrent and Photoluminescence in InGaAs/GaAs Multiple Quantum Well Solar Cells
• Vertical Transport Properties of Photogenerated Carrier in InGaAs/GaAs Strained Multiple Quantum Welts
• Sub 1V Swing Internal Bus Architecture for Future Low-Power ULSI's (Special Section on the 1992 VLSI Circuits Symposium)
• Very-Low-Current and High-Speed Switching Operation of InAlGaAs/InAlAs/InP Mach-Zehnder Interferometer-Type Photonic Switch
• In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor
• Direct Wafer Bonding Technique Aiming for Free-Material and Free-Orientation Integration of Semiconductor Materials
• Spatial distribution patterns of the sponge-dwelling gnathiid isopod Elaphognathia cornigera (Nunomura) on an intertidal rocky shore of the Izu Peninsula, southern Japan
• SPECIFICITY OF AMINO ACID SEQUENCES AT CARBOXY TERMINAL TRIPEPTIDE THAT FUNCTION AS A MICROBODY TARGETING SIGNAL.
• Half-V_ltCCgt Plate Nonvolatile DRAMs with Ferroelectric Capacitors
• Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
• Infrared Absorption Spectrum of GaInNAs
• GaInNAs:A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
• High-Speed EA-DFB Laser for 40-G and 100-Gbps
• Compact and Low-Power-Consumption 40-Gbit/s, 1.55-μm Electro-Absorption Modulators(Optical Active Devices and Modules, Recent Progress in Optoelectronics and Communications)
• Beam-Shaping Technique for End-Pumping Yb-Doped Fiber Laser with Two Laser-Diode Arrays
• Beam Combining for Three High-Power Laser-Diode Stacks with a Stripe Mirror Technique
• Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
• Comparison of Relaxation Process of Compressive and Tensile Strains in InGaAs Lattice-Mismatched Layers on InP Substrates
• High-Reflectivity InGaP/GaAs Multilayer Reflector Grown by MOCVD for Highly Reliable 0.98-μm Vertical-Cavity Surface-Emitting Lasers
• Strained Lattice Structure Analysis of InGaAsP Multilayers Using Thickness Fringes in Transmission Electron Microscopy Images
• High Resolution X-Ray Elemental Mapping Using 300-kV Field-Emission TEM
• Green-to-Yellow Continuous-Wave Operation of BeZnCdSe Quantum-Well Laser Diodes at Room Temperature
• A 35-GHz, 0.8-A/W and 26-μm Misalignment Tolerance Microlens-Integrated p-i-n Photodiodes
• Cl-Assisted Selective Area Growth of InP by Metalorganic Vapor Phase Epitaxy
• Recent Trend in High-Speed/Low-Power-Consumption Light Sources for MAN/Ethernet Applications
• First Lasing Operation of Aluminum-Free 0.98-μm-Range InGaAs/InGaP/GaAs Vertical-Cavity Surface-Emitting Lasers
• Estimation of Low Ga-Content (Less Than 10%) in A1GaAs by Spectroscopic Ellipsometry
• Polarized Raman Spectra and N-Related Local Vibrational Mode in GaNAs and GaInNAs Epitaxial Layers Grown on GaAs
• Green-to-Yellow Continuous-Wave Operation of BeZnCdSe Quantum-Well Laser Diodes at Room Temperature
• High-Power Continuous-Wave Operation of BeZnCdSe Single-Quantum-Well Green Laser Diodes
• Wide-Tuning-Wavelength-Range LGLC Laser with Low-Loss Dual-Core Spot Size Converter
• GaInNAs: A Novel Material for Long-Wavelength-Range Laser Diodes with Excellent High-Temperature Performance
• Beam Combining for Three High-Power Laser-Diode Stacks with a Stripe Mirror Technique
• Amplified Spontaneous Emission Measurement of GaInNAs Laser Wafers with and without Rapid Thermal Annealing
• Simultaneously Suppressing Bandwidth and Divergence for a High-Power Laser-Diode Array with an External-Cavity Technique
• Infrared Absorption Spectrum of GaInNAs
• In situ Deep Etching for an InGaAlAs Buried Heterostructure by Using HCl Gas in a Metalorganic Vapor Phase Epitaxy Reactor
• Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
• 25Gb/s 150-m Multi-Mode Fiber Transmission Using a CMOS-Driven 1.3-µm Lens-Integrated Surface-Emitting Laser
• Beam-Shaping Technique for End-Pumping Yb-Doped Fiber Laser with Two Laser-Diode Arrays
• Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)
• Lasing Operation of InGaAsP-Based InGaAs/GaAs Vertical-Cavity Surface-Emitting Lasers with a Strain-Compensated Active Region

もっと見る 閉じる

スポンサーリンク