Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
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概要
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Analytical solutions based on the thin surface barrier (TSB) model were utilized to reproduce the measured current--voltage characteristics of Pd/unintentionally doped Al0.08Ga0.92N/compositionally graded AlGaN/n-GaN Schottky barrier diodes (SBDs) formed on GaN free-standing substrates. The TSB thickness ($D$) and the Schottky barrier height were used as fitting parameters, while the measured surface concentration of shallow donors was used as a constant. Since the resultant $D$ was close to the value determined from the oxygen concentration profiles, the surface oxygen was concluded to be deeply-involved in the TSB formation.
- 2011-02-25
著者
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Tsuchiya Tomonobu
Central Research Laboratory Hitachi Ltd
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Terano Akihisa
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Ishigaki Takashi
Central Research Laboratory, Hitachi, Ltd., 1-280 Higashi-koigakubo, Kokubunji, Tokyo 185-8601, Japan
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Mishima Tomoyoshi
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Kaneda Naoki
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Kaneda Naoki
Research & Development Laboratory, Corporate Advanced Technology Group, Hitachi Cable, Ltd., Tsuchiura, Ibaraki 300-0026, Japan
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Tsuchiya Tomonobu
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Terano Akihisa
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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