Strained Lattice Structure Analysis of InGaAsP Multilayers Using Thickness Fringes in Transmission Electron Microscopy Images

概要

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InGaAsP/InP multilayers were deposited on InP substrates. Multilayer internal stress was controlled by changing the GaAs concentration. The strained lattice structures in InGaAsP/InP multilayers under compresive, tensite, and mixed strain (zero-net strain) are analyzed by using the thickness fringes in bright- and dark-field transmission electron microscope images. The thickness fringe shift near the multilayer/substrate interface shows lattice plane bending in opposing directions for the 0.5% compressive and tensile strained structures. The opposing lattice bending is canceled out in the zero-net strain structure, which results in a transition from cubic to tetragonal lattice distortion in the multilayer. This distortion enlarges the critical thickness to six times that of the compressive or tensile strained structure. The zero-net structure, however, can't maintain greater than ±1.4% strain because the induced stress exceeds the limit of elastic distortion. The influence of strain in these structures, as it corresponds to photoluminescence characteristics is also analyzed.
社団法人応用物理学会の論文
1995-04-15