Reliability Study of C-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors with Half-Micron-Wide Emitters
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概要
- 論文の詳細を見る
The reliability of C-doped AlGaAs/GaAs heterojunction bipolar transistors (HBTs) with emitter widths of 0.5 and 0.8 μm is studied at base-emitter junction temperatures ranging from 240℃ to 290℃ with an emitter current density of 1.0 × 10^5 A/cm^2. Although there is no difference between the initial current-voltage characteristics of HBTs fabricated using wet etching and dry etching processes, the bias stress increases the base current of the dry-etched HBTs. The excess base current has an ideality factor of two, which indicates that the damage caused during dry etching produces recombination centers during minority carrier injection. The activation energy for the current gain degradation is found to be 0.89 eV.
- 社団法人応用物理学会の論文
- 1996-10-15
著者
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Uchiyama Hiroyuki
Central Research Lab. Hitachi Ltd.
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Uchiyama Hiroyuki
Central Research Laboratory Hitachi Ltd.
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Uchiyama H
International Superconductivity Technol. Center Tokyo Jpn
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MOCHIZUKI Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Laboratory Hitachi Ltd.
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HIRATA Kohji
Hitachi ULSI Engineering Corp.
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