Uchiyama Hiroyuki | Central Research Lab. Hitachi Ltd.

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著作論文

InAlAs/InGaAs HEMTs with Uniform Threshold Voltage Fabricated by Selective Wet-Etching Using Adipic Acid
Highly Selective Wet-Etching Using Adipic Acid for Uniform Damage-Free Process of InAlAs/InGaAs HEMTs
InGaP/GaAs Sub-Square-Micron Emitter HBT with f_>100 GHz
InGaP/GaAs Sub-Square-Micron Emitter HBT with f_>100GHz
Applying a Mode Selector to Improve the Pulse-Compression Performance of Asymmetric-Coupled-Waveguide-Based Dispersion Compensators
Semiconductor Dispersion Compensator Based on Two Vertically Coupled Asymmetric Ridge Waveguides
Reliability Study of C-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors with Half-Micron-Wide Emitters
Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation(High-Speed HBTs and ICs,Heterostructure Microelectronics with TWHM2005
Semiconductor asymmetrically coupled waveguides for tunable dispersion compensation
Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p-n Junction Epitaxial Layers (Special Issue : Recent Advances in Nitride Semiconductors)

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