Tanoue T | Central Research Laboratory Hitachi Ltd.

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概要

• TANOUE Tomonoriの詳細を見る
• 同名の論文著者
• Central Research Laboratory Hitachi Ltd.の論文著者

関連著者

• TANOUE Tomonori

  Central Research Laboratory, Hitachi, Ltd.

• Tanoue T

  Central Research Laboratory Hitachi Ltd.

• Tanoue Tomonori

  Central Research Laboratory Hitachi Ltd.

• OUCHI Kiyoshi

  Central Research Laboratory, Hitachi, Ltd.

• MASUDA Hiroshi

  Toei Kogyo Ltd.

• Oka Tohru

  Central Research Laboratory Hitachi Ltd.

• Ouchi Kiyoshi

  Central Research Laboratory Hitachi Ltd.

• MASUDA Hiroshi

  Central Research Laboratory, Hitachi, Ltd.

• TERANO Akihisa

  Central Research Laboratory, Hitachi, Ltd.

• Terano Akihisa

  Central Research Laboratory Hitachi Ltd.

• Masuda H

  Toei Kogyo Ltd.

• Masuda Hiroshi

  Central Research Laboratory Hitachi Ltd.

• MISHIMA Tomoyoshi

  Central Research Laboratory, Hitachi, Ltd.

• UCHIYAMA Hiroyuki

  Central Research Lab., Hitachi, Ltd.

• Uchiyama Hiroyuki

  Central Research Lab. Hitachi Ltd.

• Uchiyama Hiroyuki

  Central Research Laboratory Hitachi Ltd.

• Hirata K

  Laboratory Of Protein Chemistry And Engineering Graduate School Of Genetic Resources Technology Kyus

• Uchiyama H

  International Superconductivity Technol. Center Tokyo Jpn

• MOCHIZUKI Kazuhiro

  Central Research Laboratory, Hitachi Ltd.

• HIRATA Koji

  Hitachi ULSI Engineering Corporation

• Mochizuki K

  Central Research Laboratory Hitachi Ltd.

• Mochizuki Kazuhiro

  Central Research Lab.hitachi Ltd.

• Mishima T

  Central Research Laboratory Hitachi Ltd.

• Mishima Tomoyoshi

  Central Research Lab. Hitachi Ltd.

• SUZUKI Hideyuki

  Central Research Laboratory, Hitachi, Ltd.

• WATANABE Koichi

  Central Research Laboratory, Hitachi, Ltd.

• MATSUBARA Hirokazu

  Central Research Laboratory, Hitachi, Ltd.

• Suzuki Hideyuki

  Central Research Laboratory Hitachi Ltd.

• Watanabe Koichi

  Central Research Laboratory Hitachi Ltd.

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著作論文

• High Performance InP/InGaAs HBTs for 40-Gb/s Optical Transmission ICs (Special Issue on Ultra-High-Speed IC and LSI Technology)
• Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
• Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
• InGaP/GaAs Sub-Square-Micron Emitter HBT with f_>100 GHz
• InGaP/GaAs Sub-Square-Micron Emitter HBT with f_>100GHz

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