Mochizuki K | Central Research Laboratory Hitachi Ltd.

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概要

• MOCHIZUKI Kazuhiroの詳細を見る
• 同名の論文著者
• Central Research Laboratory Hitachi Ltd.の論文著者

関連著者

• MOCHIZUKI Kazuhiro

  Central Research Laboratory, Hitachi Ltd.

• Mochizuki K

  Central Research Laboratory Hitachi Ltd.

• Mochizuki Kazuhiro

  Central Research Lab.hitachi Ltd.

• OUCHI Kiyoshi

  Central Research Laboratory, Hitachi, Ltd.

• Oka Tohru

  Central Research Laboratory Hitachi Ltd.

• Ouchi Kiyoshi

  Central Research Laboratory Hitachi Ltd.

• Kusano Chuushiro

  Central Research Laboratory, Hitachi Ltd.

• Kusano C

  Central Research Laboratory Hitachi Ltd.

• MASUDA Hiroshi

  Central Research Laboratory, Hitachi, Ltd.

• Tanoue Tomonori

  Central Research Laboratory Hitachi Ltd.

• Masuda H

  Hitachi Ltd. Tokyo Jpn

• Mishima T

  Central Research Laboratory Hitachi Ltd.

• Mishima Tomoyoshi

  Central Research Lab. Hitachi Ltd.

• Masuda Hiroshi

  Central Research Laboratory Hitachi Ltd.

• Nakamura T

  National Defense Acad. Kanagawa Jpn

• NIKI Toshikazu

  Ishikawa Seisakusho, Ltd.

• Nakamura Takanori

  Functional Materials Research Dept. R & D Div. Murata Manufacturing Co. Ltd.

• MISHIMA Tomoyoshi

  Central Research Laboratory, Hitachi, Ltd.

• GOTO Shigeo

  Central Research Laboratory, Hitachi Ltd.

• Kawata M

  Hitachi Ltd. Tokyo Jpn

• NAKAMURA Tohru

  Central Research Laboratory, Hitachi, Ltd.

• Nakamura T

  Department Of Earth And Ocean Sciences National Defense Academy

• Goto S

  Central Research Laboratory Hitachi Ltd.

• Niki Toshikazu

  Ishikawa Seisakusho Ltd.

• TANOUE Tomonori

  Central Research Laboratory, Hitachi, Ltd.

• Tanoue T

  Central Research Laboratory Hitachi Ltd.

• Mitani Katsuhiko

  Central Research Laboratory, Hitachi Ltd.

• Nakamura Tohru

  Central Research Lab. Hitachi Ltd.

• KAWATA Masahiko

  Central Research Laboratory, Hitachi Ltd.

• ISOMAE Seiichi

  Central Research Lab., Hitachi, Lid.

• Kawata Masahiko

  Central Research Lab.hitachi Ltd.

• Oka T

  Nagaoka Coll. Technol. Niigata Jpn

• Isomae S

  Hitachi Ltd. Tokyo Jpn

• KUSANO Chushirou

  Central Research Laboratory, Hitachi Ltd.

• KAWADA Masahiko

  Central Research Laboratory, Hitachi Ltd.

• Kakibayashi Hiroshi

  Central Research Laboratory Hitachi Ltd

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著作論文

• Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base : Semiconductors
• Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
• A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
• Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
• New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs
• Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors
• The Effect on Turn-On Voltage (V_) of AlGaAs/GaAs HBT's due to the Structure of the Emitter-Base Heterojunction
• Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors
• Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors
• Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE

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