Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
The surface recombination current with an ideality factor of unity was clearly observed in AlGaAs/GaAs abrupt heterojunction bipolar transistors (HBTs) with the uniform base structure. This was derived from the difference in the base current of HBTs with and without a surface passivation layer of depleted AlGaAs. It had a linear dependence on the emitter mesa perimeter and had no coomponent with and ideality factor of two even at a low base-emitter bias. The results were explained by a simple analysis assuming a high surface recombination velocity.
- 社団法人応用物理学会の論文
- 1991-02-15
著者
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KAWATA Masahiko
Central Research Laboratory, Hitachi Ltd.
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Kawata M
Hitachi Ltd. Tokyo Jpn
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Kawata Masahiko
Central Research Lab.hitachi Ltd.
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MOCHIZUKI Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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MASUDA Hiroshi
Central Research Laboratory, Hitachi, Ltd.
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Mitani Katsuhiko
Central Research Laboratory, Hitachi Ltd.
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Kusano Chuushiro
Central Research Laboratory, Hitachi Ltd.
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Masuda H
Hitachi Ltd. Tokyo Jpn
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Mochizuki K
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Kusano C
Central Research Laboratory Hitachi Ltd.
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Masuda Hiroshi
Central Research Laboratory Hitachi Ltd.
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