Operating Current Dependence of CdZnSe/ZnMgSSe Laser Diodes on Band Gap and Carrier Concentration of P-Type Cladding Layer

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概要

• 論文の詳細を見る
• 1995-08-21

著者

• Kawata Masahiko

  Central Research Lab.hitachi Ltd.

• Gotoh Jun

  Central Research Lab.hitachi Ltd.

• Momose M

  Tokyo Inst. Technol. Yokohama

• Nakatsuka Shin'ichi

  Central Research Lab.hitachi Ltd.

• Mochizuki Kazuhiro

  Central Research Lab.hitachi Ltd.

• Taike Akira

  Central Research Lab. Hitachi Ltd., Higashi-koigakubo 1-280, Kokubunji, Tokyo 185, Japan

• Momose Masayuki

  Central Research Lab. Hitachi Ltd., Higashi-koigakubo 1-280, Kokubunji, Tokyo 185, Japan

• Taike Akira

  Central Research Lab.hitachi Ltd.

関連論文

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• Increased Size of Open Hexagonally Shaped Pits due to Growth Interruption and Its Influence on InGaN/GaN Quantum-Well Structures Grown by Metalorganic Vapor Phase Epitaxy
• Characterization of InGaP/GaAs Heterojunction Bipolar Transistors with a Heavily Doped Base : Semiconductors
• Fully Strained Heavily Carbon-Doped GaAs Grown by Gas-Source Molecular Beam Epitaxy Using Carbontetrabromide and Its Application to InGaP/GaAs Heterojunction Bipolar Transistors
• A WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Speed and Low-Power InGaP/GaAs HBTs
• Fully Strained Heavily Carbon-Doped GaAs Using Carbontetrabromide by Gas-Source Molecular Beam Epitaxy and Its Application in InGaP/GaAs Heterojunction Bipolar Transistors
• New Technologies of a WSi Base Electrode and a Heavily-Doped Thin Base Layer for High-Performance InGaP/GaAs HBTs
• Observation of the Surface Recombination Current with an Ideality Factor of Unity in AlGaAs/GaAs Heterojunction Bipolar Transistors
• The Effect on Turn-On Voltage (V_) of AlGaAs/GaAs HBT's due to the Structure of the Emitter-Base Heterojunction
• On the Determination of the Specific Contact Resistance of Alloyed Contacts to n-GaAs
• Analysis of Leakage Current at Pd/AlGaN Schottky Barriers Formed on GaN Free-Standing Substrates
• Dependence of CdZnSe/ZnMgSSe Laser Diode Operating Characteristics on Band Gap and Net Acceptor Concentration of p-Type Cladding Layer
• Operating Current Dependence of CdZnSe/ZnMgSSe Laser Diodes on Band Gap and Carrier Concentration of P-Type Cladding Layer
• Reliability Study of C-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors with Half-Micron-Wide Emitters
• Effects of Rapid Thermal Annealing on Bias-Stress-Induced Base Leakage in InGaP/GaAs Collector-Up Heterojunction Bipolar Transistors Fabricated with B Ion Implantation(High-Speed HBTs and ICs,Heterostructure Microelectronics with TWHM2005
• Stress Effect on Current-Induced Degradation of Be-Doped AlGaAs/GaAs Heterojunction Bipolar Transistors
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• Experimentally Proven Equation for the Collector-Depletion-Layer Transit Time of npn Bipolar Transistors
• Influence of Substrate Orientation on Be Transport during Molecular Beam Epitaxy of AlGaAs/GaAs Heterojunction Bipolar Transistors
• Influence of Substrate Misorientation on Surface Morphology of Be-Doped GaAs Grown by MBE
• Determination of Lateral Extension of Extrinsic Photon Recycling in p-GaN by Using Transmission-Line-Model Patterns Formed with GaN p--n Junction Epitaxial Layers
• Substrate Misorientation Effect on Be Transport during MBE Growth of GaAs
• Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide
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