The Effect on Turn-On Voltage (V_<BE>) of AlGaAs/GaAs HBT's due to the Structure of the Emitter-Base Heterojunction
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1990-08-20
著者
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Kawata M
Hitachi Ltd. Tokyo Jpn
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MOCHIZUKI Kazuhiro
Central Research Laboratory, Hitachi Ltd.
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MASUDA Hiroshi
Central Research Laboratory, Hitachi, Ltd.
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Mitani Katsuhiko
Central Research Laboratory, Hitachi Ltd.
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Kusano Chuushiro
Central Research Laboratory, Hitachi Ltd.
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KUSANO Chushirou
Central Research Laboratory, Hitachi Ltd.
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KAWADA Masahiko
Central Research Laboratory, Hitachi Ltd.
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Masuda H
Hitachi Ltd. Tokyo Jpn
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Mochizuki K
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Kusano C
Central Research Laboratory Hitachi Ltd.
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Masuda Hiroshi
Central Research Laboratory Hitachi Ltd.
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- The Effect on Turn-On Voltage (V_) of AlGaAs/GaAs HBT's due to the Structure of the Emitter-Base Heterojunction
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