Dual-Sublattice Modeling and Semi-Atomistic Simulation of Boron Diffusion in 4H-Silicon Carbide
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概要
- 論文の詳細を見る
Reported profiles of high-temperature (500 °C)-implanted boron ions diffused in 4H-silicon carbide at 1200–1900 °C for 5–90 min were simulated through a "dual-sublattice" modeling, in which a different diffusivity is assigned for diffusion via each sublattice, and a "semi-atomistic" simulation, in which silicon and carbon interstitials are regarded as the same interstitials (I) and silicon and carbon vacancies are regarded as the same vacancies (V). Diffusion of implanted boron ions is calculated from the initial concentration profiles of I and V by Monte-Carlo simulation assuming tentatively a probability of 50% that implanted boron ions will occupy carbon sublattices.
- Published by the Japan Society of Applied Physics through the Institute of Pure and Applied Physicsの論文
- 2009-03-25
著者
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Shimizu Haruka
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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Yokoyama Natsuki
Central Research Laboratory, Hitachi, Ltd., Kokubunji, Tokyo 185-8601, Japan
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