Simulation of the Effect of Emitter Doping on the Delay Time in AlGaAs/GaAs Heterojunction Bipolar Transistors
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概要
- 論文の詳細を見る
The influence of the emitter doping level (5×10^<17>-5×10^<18> cm^<-3>) on the delay time in AlGaAs/GaAs heterojunction bipolar transistors is investigated using numerical simulation based on a drift-diffusion model. The results reveal that the emitter delay time (τ_E) decreases with higher emitter doping (5×10^<18> cm^<-3>), allowing a very short delay time (<0.2 ps). It is shown that τ_E is affected by excess charge accumulation due to the built-in electric field at the cap/emitter (n^+-GaAs/n-AlGaAs) isotype heterojunction, more than at the emitter/base (n-AlGaAs/p^+-GaAs) heterojunction, under high-current operation (>10^4 A/cm^2).
- 社団法人応用物理学会の論文
- 1992-12-01
著者
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Mizuta H
Hitachi Cambridge Laboratory:crest Jst (japan Science And Technology)
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MASUDA Hiroshi
Central Research Laboratory, Hitachi, Ltd.
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YAMAGUCHI Ken
Central Research Laboratory, Hitachi, Lid.
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KUSANO Chushiro
Central Research Laboratory
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Kusano Chushiro
Central Research Laboratory Hitachi Ltd.
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Mochizuki Kazuhiro
Central Research Lab.hitachi Ltd.
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MIZUTA Hiroshi
Central Research Laboratory, Hitachi Ltd.
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Mizuta Hiroshi
Central Research Laboratory Hitachi Ltd.
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Yamaguchi Ken
Central Research Laboratory Hitachi Ltd.
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Yamaguchi Ken
Central Research Laboratory
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Masuda Hiroshi
Central Research Laboratory Hitachi Ltd.
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