A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET) : B-3: NOVEL DEVICES
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概要
- 論文の詳細を見る
- 社団法人応用物理学会の論文
- 1983-02-28
著者
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MURAYAMA Yoshimasa
Central Research Laboratory,Hitachi Ltd.
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Katayama Yoshifumi
Central Research Laboratory
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Yamaguchi Ken
Central Research Laboratory
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Shiraki Yasuhiro
Central Research Laboratory
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Murayama Yoshimasa
Central Research Laboratory
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- XPS Determination of Amount of Incorporated Rare Gas in Amorphous Silicon Films Produced with Reactive Sputtering Method
- Observation of Si-2p Level Shift in Hydrogenated Amorphous Silicon by X-Ray Photoelectron Spectroscopy
- Photoluminescence Observation of Defects in Silicon : B-3: CRYSTAL GROWTH AND DEFECTS
- A New Short Channel MOSFET with an Atomic-Layer-Doped Impurity-Profile (ALD-MOSFET) : B-3: NOVEL DEVICES
- Formation of Embedded Monocrystalline NiSi_2 Grid Layers in Silicon by MBE