GaAs_<1-x>P_x Light Emitting Diodes Produced by Zn Ion Implantation. : II. Photoluminescence of p-Type Layers Formed by Ion Implantation and Diffusion
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概要
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Photoluminescence of Zn implanted and Zn diffused GaAs_<1-x>P_x crystals was studied in order to clarify the reason for the extremely high luminescence efficiency of GaAs_<1-x>P_x diodes produced by ion implantation compared with diffused diodes. One of the reasons was found to be that the luminescence of the implanted diode occurs over a much wider region of the p-type layer compared with that of the diffused diode. Moreover, the ion implantation method was found to be capable of producing a p-type layer without the absorption band below the bandgap due to excess Zn atoms which reduce the luminescence efficiency of the diffused diode. From a photoluminescence study of the p-type layer with low Zn concentration produced by using ion implantation, one of the main components of the electroluminescence of GaAs_<1-x>P_x diodes at low temperatures, which had not clearly been identified, was determined to be a Zn-Te donor-acceptor pair recombination.
- 社団法人応用物理学会の論文
- 1975-10-05
著者
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Shiraki Yasuhiro
Central Research Laboratory Hitachi Ltd.
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Shimada Toshikazu
Central Research Laboratory
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Komatsubara Kiichi
Central Research Laboratory
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ONO Yuich
Central Research Laboratory, Hitachi, Ltd.
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Ono Yuich
Central Research Laboratory Hitachi Ltd.
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Shiraki Yasuhiro
Central Research Laboratory
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