XPS Determination of Amount of Incorporated Rare Gas in Amorphous Silicon Films Produced with Reactive Sputtering Method
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概要
- 論文の詳細を見る
The incorporation of rare gas into a-Si:H produced by the reactive sputtering method is studied with XPS measurements. The amount of neon incorporated in an a-Si:H film prepared in a 93% Ne+7% H_2 gas mixture decreases monotonically from 7 atomic % until it becomes undetectable, as the total pressure is increased from 0.2 Pa to 30 Pa. A-Si:H films produced under the same Ne partial pressure without H_2 contain ca. 1.7 times as much amount of Ne atoms as those prepared with H_2.
- 社団法人応用物理学会の論文
- 1980-11-05
著者
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Usami Katsuhisa
Hitachi Research Laboratory Hitachi Ltd.
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Usami Katsuhisa
Hitachi Research Laboratory
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SHIMADA Toshikazu
Central Research Laboratory, Hitachi Ltd.
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KATAYAMA Yoshifumi
Central Research Laboratory, Hitachi Ltd.
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Shimada Toshikazu
Central Research Laboratory
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Katayama Yoshifumi
Central Research Laboratory
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