GaAs_<1-x>P_x Light Emitting Diodes Produced by Zn Ion Implantation. : I. Dose Dependence of Properties of Implanted Diodes
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概要
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Properties of GaAs_<1-x>P_x light-emitting diodes produced by Zn ion implantation have been investigated as functions of ion dose. The luminescence efficiency of the implanted diode peaks at a dose of around 4〜8×10^<15> cm^<-2> and exceeds more than twice that of conventional thermally diffused diodes. The implanted diode has a p^+ -p^- -n structure in contrast to the p^+ -n structure of the diffused diode, and the width ratio (p^-/p^+) decreases as a function of the logarithm of the ion dose. The width of the depletion layer and the breakdown voltage of the implanted diode are larger than those of the diffused diode and decreases with increasing ion dose. The intensity ratio of the lower energy peak to the higher energy peak in EL spectra at 77 K increases with increasing ion dose. The relative intensity of the lower energy peak in the diffused diode with high Zn concentration is weak and the half-widths of peaks are large compared with the implanted diode.
- 社団法人応用物理学会の論文
- 1975-10-05
著者
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Saito Kazutoshi
Central Research Laboratory Hitachi Ltd.
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Shiraki Yasuhiro
Central Research Laboratory Hitachi Ltd.
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Ono Y
Central Research Laboratory Hitachi Ltd
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Shimada Toshikazu
Central Research Laboratory Hitachi Ltd.
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Shimada Toshikazu
Central Research Laboratory
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ONO Yuichi
Central Research Laboratory, Hitachi, Ltd.
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Ono Yuichi
Central Research Laboratory Hitachi Ltd.
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Shiraki Yasuhiro
Central Research Laboratory
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