Reduction of Threshold Current of Buried-Heterostructure Injection Lasers : B-6: SEMICONDUCTOR LASERS (I)

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概要

• 論文の詳細を見る
• 社団法人応用物理学会の論文

著者

• Saito Kazutoshi

  Central Research Laboratory Hitachi Ltd.

• Shima Yasuji

  Central Research Laboratory Hitachi Ltd.

• Tsukada Toshihisa

  Central Research Laboratory Hitachi Lid.

• SHIGE Noriyuki

  Central Research Laboratory, Hitachi, Ltd.

• Shige Noriyuki

  Central Research Laboratory Hitachi Ltd.

• SHIMA Yasuji

  Central Research Laboratory, Hitachi, Ltd.

関連論文

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• Threshold Voltage Shift of Amorphous Silicon Thin-Film Transistors During Pulse Operation
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• GaAs_P_x Light Emitting Diodes Produced by Zn Ion Implantation. : I. Dose Dependence of Properties of Implanted Diodes
• Reduction of Threshold Current of Buried-Heterostructure Injection Lasers : B-6: SEMICONDUCTOR LASERS (I)
• Dependence of the Degradation Rate of Ga_Al_xAs Buried Hetero-Structure Injection Lasers on Optical Flux Density

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